M27256-F6 STMICROELECTRONICS [STMicroelectronics], M27256-F6 Datasheet - Page 6

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M27256-F6

Manufacturer Part Number
M27256-F6
Description
NMOS 256K 32K x 8 UV EPROM
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
M27256
Table 8. Programming Mode DC Characteristics
(T
Note. 1. V
Table 9. Programming Mode AC Characteristics
(T
Notes. 1. V
6/10
Symbol
t
A
A
GHQZ
t
t
t
t
t
t
t
VCHEL
t
t
t
VPHEL
EHQX
QXGL
GLQV
GHAX
= 25 C; V
= 25 C; V
AVEL
QVEL
ELEH
ELEH
Symbol
2. The Initial Program Pulse width tolerance is 1 ms 5%.
3. The length of the Over-program Pulse varies from 2.85 ms to 78.95 ms, depending on the multiplication value of the iteration counter.
4. Sampled only, not 100% tested.
V
V
V
V
I
V
I
I
CC
PP
(4)
OH
LI
OL
CC
IH
ID
IL
CC
must be applied simultaneously with or before V
must be applied simultaneously with or before V
t
t
t
t
t
t
OPW
Alt
t
t
t
t
VCS
OES
t
VPS
DFP
PW
CC
DS
DH
OE
AH
CC
AS
Input Leakage Current
Supply Current
Program Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
A9 Voltage
= 6V
= 6V
Address Valid to Chip Enable
Low
Input Valid to Chip Enable Low
V
V
Chip Enable Program Pulse
Width (Initial)
Chip Enable Program Pulse
Width (Overprogram)
Chip Enable High to Input
Transition
Input Transition to Output
Enable Low
Output Enable Low to
Output Valid
Output Enable Low to
Output Hi-Z
Output Enable High to
Address Transition
PP
CC
Parameter
High to Chip Enable Low
0.25V; V
0.25V; V
High to Chip Enable Low
Parameter
PP
PP
= 12.5V
= 12.5V
PP
Test Condition
0.3V)
V
0.3V)
PP
I
OH
I
and removed simultaneously or after V
IL
OL
and removed simultaneously or after V
E = V
= –400 A
= 2.1mA
V
(1)
(1)
IN
Test Condition
IL
V
IH
Note 2
Note 3
–0.1
11.5
Min
2.4
2
0.95
2.85
Min
PP
2
2
2
2
2
2
0
0
PP
.
.
V
CC
Max
0.45
12.5
100
0.8
50
10
+ 1
78.75
Max
1.05
150
130
Unit
mA
mA
V
V
V
V
V
Unit
A
n s
ms
ms
ns
ns
s
s
s
s
s
s

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