BUK436W-200B PHILIPS [NXP Semiconductors], BUK436W-200B Datasheet - Page 5

• Manufacturer Part Number: BUK436W-200B
• Description: PowerMOS transistor
• Manufacturer: PHILIPS [NXP Semiconductors]

Philips Semiconductors
July 1997
PowerMOS transistor
Fig.13. Typical turn-on gate-charge characteristics.
V
GS
12
10
8
6
4
2
0
= f(Q
0
VGS / V
G
); conditions: I
10
QG / nC
20
D
= 19 A; parameter V
30
VDS / V =40
BUK456-200
160
40
DS
5
I
F
40
30
20
10
= f(V
0
Fig.14. Typical reverse diode current.
0
IF / A
SDS
); conditions: V
Tj / C = 150
VSDS / V
BUK436W-200A/B
1
GS
25
= 0 V; parameter T
Product Specification
BUK456-200A
Rev 1.000
2
j