K9K1208Q0C Samsung semiconductor, K9K1208Q0C Datasheet - Page 34

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K9K1208Q0C

Manufacturer Part Number
K9K1208Q0C
Description
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
Manufacturer
Samsung semiconductor
Datasheet

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Program/Erase OPERATION(In Locked or Lock-tighten Block)
On the program or erase operation in Locked or Lock-tighten block, Busy state holds 1~10µs(
K9K1208Q0C
K9K1208D0C
K9K1208U0C
R/B
I/Ox
WPx = H &
Lock block command (2Ah)
WPx = H &
Lock-tight block command (2Ch)
60h(80h)
K9K1216Q0C
K9K1216D0C
K9K1216U0C
Address(&Data Input)
Figure 15. State diagram of Block Lock
Unlock block Command (23h) + Start Block Address
Block Lock reset
WPx = L (>100ns)
Locked or Lock-tighten Block address
Lock-tight
WPx = H &
unlock
Lock
Lock
Lock
+ Command (24h) + End Block Address
D0h(10h)
Unlock block Command (23h) + Start Block Address
Block Lock reset
WPx = L (>100ns)
WPx = H &
34
+ Command (24h) + End Block Address
Power-up
t
LBSY
WPx = H &
Lock-tight block command (2Ch)
FLASH MEMORY
t
LBSY)
Lock-tight
Lock-tight
unlock
unlock
Lock
Lock

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