K9K1208Q0C Samsung semiconductor, K9K1208Q0C Datasheet - Page 12

• Manufacturer Part Number: K9K1208Q0C
• Description: 64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

PROGRAM/ERASE CHARACTERISTICS
AC TIMING CHARACTERISTICS FOR COMMAND / ADDRESS / DATA INPUT
NOTE: 1. If tCS is set less than 10ns, tWP must be minimum 35ns, otherwise, tWP may be minimum 25ns.
K9K1208Q0C
K9K1208D0C
K9K1208U0C
CLE setup Time
CLE Hold Time
CE setup Time
CE Hold Time
WE Pulse Width
ALE setup Time
ALE Hold Time
Data setup Time
Data Hold Time
Write Cycle Time
WE High Hold Time
Program Time
Dummy Busy Time for the Lock or Lock-tight Block
Number of Partial Program Cycles
in the Same Page
Block Erase Time
Parameter
Symbol
t
t
t
t
t
t
t
Parameter
t
t
t
t
CLS
CLH
ALH
ALS
WP
WC
WH
CS
CH
DS
DH
K9K1216Q0C
K9K1216D0C
K9K1216U0C
K9K12XXD0C
K9K12XXU0C
K9K1208X0C
25
10
10
10
20
10
50
15
0
0
0
(1)
Spare Array
Main Array
Min
K9K1216Q0C
Symbol
t
t
t
PROG
Nop
LBSY
BERS
10
10
40
10
20
10
60
20
12
0
0
0
Min
-
-
-
-
-
K9K12XXD0C
K9K12XXU0C
K9K1208X0C
-
-
-
-
-
-
-
-
-
-
-
Typ
200
5
2
-
-
Max
FLASH MEMORY
K9K1216Q0C
Max
500
10
2
3
3
-
-
-
-
-
-
-
-
-
-
-
cycles
cycles
Unit
ms
µs
µs
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns