UPA805T-T1 NEC [NEC], UPA805T-T1 Datasheet
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UPA805T-T1
Related parts for UPA805T-T1
UPA805T-T1 Summary of contents
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PRELIMINARY DATA SHEET MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD FEATURES • Low Noise, High Gain • Operable at Low Voltage • Small Feed-back Capacitance C = 0.3 pF TYP. re • Built-in ...
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ELECTRICAL CHARACTERISTICS (T PARAMETER SYMBOL Collector Cutoff Current I CBO Emitter Cutoff Current I EBO DC Current Gain h FE Gain Bandwidth Product f T Feed-back Capacitance Insertion Power Gain | Noise Figure NF h ...
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GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT GHz 0 Collector Current I (mA) C NOISE FIGURE vs. ...
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S-PARAMETERS mA S11 GHz MAG ANG 0.200 0.9410 –9.3 0.200 0.9280 –17.7 0.600 0.8670 –26.0 0.800 0.8150 –33.6 1.000 0.7280 –41.5 1.200 0.6700 –47.3 1.400 0.5970 ...
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PA805T 5 ...
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