CM150TU-12H_12 MITSUBISHI [Mitsubishi Electric Semiconductor], CM150TU-12H_12 Datasheet - Page 3

• Manufacturer Part Number: CM150TU-12H_12
• Description: HIGH POWER SWITCHING USE INSULATED TYPE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

PERFORMANCE CURVES
300
250
200
150
100
10
10
10
50
0
COLLECTOR-EMITTER VOLTAGE V
5
4
3
2
1
0
EMITTER-COLLECTOR VOLTAGE V
3
7
5
3
2
2
7
5
3
2
1
0.6
0
0
COLLECTOR-EMITTER SATURATION
V
T
V
T
GE
j
=25°C
j
GE
FORWARD CHARACTERISTICS
(V)
VOLTAGE CHARACTERISTICS
= 25°C
COLLECTOR CURRENT I
OUTPUT CHARACTERISTICS
=20
15
1.0
50
= 15V
T
T
2
j
j
FREE-WHEEL DIODE
= 25°C
= 125°C
100
1.4
( TYPICAL )
( TYPICAL )
( TYPICAL )
4
14
150
1.8
6
200
2.2
C
8
250
2.6
( A )
13
12
11
10
9
8
CE
EC
300
3.0
10
( V )
( V )
3
10
300
250
200
150
100
10
10
10
50
10
–1
0
8
6
4
2
0
COLLECTOR-EMITTER VOLTAGE V
7
5
3
2
7
5
3
2
7
5
3
2
10
2
1
0
0
0
COLLECTOR-EMITTER SATURATION
CAPACITANCE CHARACTERISTICS
–1
V
V
T
GATE-EMITTER VOLTAGE V
GATE-EMITTER VOLTAGE V
CE
j
GE
TRANSFER CHARACTERISTICS
VOLTAGE CHARACTERISTICS
= 25°C
2
= 10V
= 0V
3 5 7
4
4
10
( TYPICAL )
( TYPICAL )
( TYPICAL )
0
HIGH POWER SWITCHING USE
8
8
2
MITSUBISHI IGBT MODULES
3 5 7
12
12
10
CM150TU-12H
1
T
T
I
I
j
j
C
C
2
I
= 25°C
= 125°C
16
16
C
= 300A
= 150A
GE
GE
3 5 7
INSULATED TYPE
= 60A
C
C
C
( V )
( V )
oes
res
CE
ies
10
20
20
( V )
2
Feb. 2009