CM150DY-24NF_09 MITSUBISHI [Mitsubishi Electric Semiconductor], CM150DY-24NF_09 Datasheet

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CM150DY-24NF_09

Manufacturer Part Number
CM150DY-24NF_09
Description
IGBT MODULES HIGH POWER SWITCHING USE
Manufacturer
MITSUBISHI [Mitsubishi Electric Semiconductor]
Datasheet
APPLICATION
General purpose inverters & Servo controls, etc
OUTLINE DRAWING & CIRCUIT DIAGRAM
CM150DY-24NF
2-φ6.5 MOUNTING HOLES
Tc measured point (Base plate)
17
C2E1
12
16
23
7
LABEL
80
16
12
94
E2
±0.25
23
7
16
12
C1
17
1
¡I
¡V
¡Insulated Type
¡2-elements in a pack
TAB #110. t=0.5
3-M5 NUTS
C ...................................................................
CES .........................................................
CM150DY-24NF
C2E1
HIGH POWER SWITCHING USE
MITSUBISHI IGBT MODULES
CIRCUIT DIAGRAM
E2
4
Dimensions in mm
C1
1200V
Feb. 2009
150A

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CM150DY-24NF_09 Summary of contents

Page 1

... CM150DY-24NF APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Tc measured point (Base plate) 17 2-φ6.5 MOUNTING HOLES CM150DY-24NF ¡I C ................................................................... ¡V CES ......................................................... ¡Insulated Type ¡2-elements in a pack C2E1 E2 C1 3-M5 NUTS ±0.25 TAB #110. t=0.5 ...

Page 2

... GE IGBT part (1/2 module) FWDi part (1/2 module) *2 Case to heat sink, Thermal compound Applied Case temperature measured point is just under the chips ) does not exceed MITSUBISHI IGBT MODULES CM150DY-24NF HIGH POWER SWITCHING USE Ratings 1200 ±20 150 300 (Note 2) 150 (Note 2) 300 780 – ...

Page 3

... ies 10 C oes 10 C res ( MITSUBISHI IGBT MODULES CM150DY-24NF HIGH POWER SWITCHING USE COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL 15V 25° 125° 100 150 200 ...

Page 4

... IGBT part: –2 10 Per unit base = 0.16K/W th(j–c) 5 FWDi part: 3 Per unit base = 0.25K/W th(j–c) – CM150DY-24NF – Single Pulse T = 25°C C – – –3 10 – ...

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