GM71V17403C-5 Hynix Semiconductor, GM71V17403C-5 Datasheet - Page 4

• Manufacturer Part Number: GM71V17403C-5
• Description: 4/194/304 WORDS x 4 BIT CMOS DYNAMIC RAM
• Manufacturer: Hynix Semiconductor

Rev 0.1 / Apr’01
Capacitance (V
AC Characteristics (V
Read, Write, Read-Modify-Write and Refresh Cycles (Common Parameters)
Note: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.
Symbol
Test Conditions
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
RC
RP
CP
RAS
CAS
ASR
RAH
ASC
CAH
RCD
RAD
RSH
CSH
CRP
ODD
DZO
DZC
T
Input rise and fall times : 2ns
Input levels : V
Input timing reference levels : 0.8V, 2.0V
Symbol
2. CAS = V
C
C
C
I1
I2
I/O
Random Read or Write Cycle Time
RAS Precharge Time
CAS Precharge Time
RAS Pulse Width
CAS Pulse Width
Row Address Set up Time
Row Address Hold Time
Column Address Set-up Time
Column Address Hold Time
RAS to CAS Delay Time
RAS to Column Address Delay Time
RAS Hold Time
CAS Hold Time
CAS to RAS Precharge Time
OE to D
OE Delay Time from D
CAS Delay Time from D
Transition Time (Rise and Fall)
IH
to disable D
IL
IN
= 0V, V
CC
Delay Time
Input Capacitance (Address)
Input Capacitance (Clocks)
Output Capacitance (Data-In/Out)
Parameter
= 3.3V +/- 0.3V, T
IH
OUT
= 3V
CC
.
IN
= 3.3V +/- 0.3V, V
IN
Parameter
A
Output timing reference levels : 0.8V, 2.0V
Output load : 1 TTL gate + C
= 25C)
GM71V(S)17403
C/CL-5
Min
84
30
50
12
10
10
35
13
8
0
8
0
8
0
2
8
5
0
SS
10,000
10,000
Max
= 0V, T
37
25
50
-
-
-
-
-
-
-
-
-
-
-
-
-
(Including scope and jig)
GM71V(S)17403
C/CL-6
Min
104
Min
40
10
60
10
10
10
14
12
13
40
15
-
-
-
0
0
0
2
5
0
A
10,000
10,000
Max
= 0 ~ 70C, Notes 1, 2, 18)
45
30
50
-
-
-
-
-
-
-
-
-
-
-
-
-
L
Max
GM71V(S)17403
C/CL-7
(100pF)
Min
124
5
7
7
50
13
13
10
13
14
12
13
70
45
18
GM71VS17403CL
0
0
0
2
5
0
10,000
10,000
Max
GM71V17403C
52
35
50
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
pF
pF
pF
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note
1, 2
Note
1
1
3
4
5
6
6
7