GM71V17403C-5 Hynix Semiconductor, GM71V17403C-5 Datasheet - Page 3

• Manufacturer Part Number: GM71V17403C-5
• Description: 4/194/304 WORDS x 4 BIT CMOS DYNAMIC RAM
• Manufacturer: Hynix Semiconductor

Rev 0.1 / Apr’01
DC Electrical Characteristics (V
Note: 1. I
Symbol
V
V
I
I
I
I
I
I
I
I
I
I
I
L(O)
CC1
CC2
CC3
CC4
CC5
CC6
CC7
CC8
CC9
L(I)
OH
OL
2. Address can be changed once or less while RAS = V
3. Address can be changed once or less while CAS = V
4. CAS = L (<=0.2) while RAS = L (<=0.2).
5. L - Version.
I
CC
CC
(max) is specified at the output open condition.
depends on output load condition when the device is selected.
Self-Refresh Mode Current
(RAS, CAS<=0.2V
Output Level
Output "H" Level Voltage (I
Output Level
Output "L" Level Voltage (I
Operating Current
Average Power Supply Operating Current
(RAS, CAS Cycling
Standby Current (TTL)
Power Supply Standby Current
(RAS, CAS = V
RAS Only Refresh Current
Average Power Supply Current
RAS Only Refresh Mode
(t
Standby Current (CMOS)
Power Supply Standby Current
(RAS, CAS >= V
CAS-before-RAS Refresh Current
(t
Battery Backup Operating Current(Standby with CBR Refresh)
(CBR refresh, t
D
Standby Current RAS = V
Input Leakage Current
Any Input (0V
Output Leakage Current
(D
EDO Page Mode Current
Average Power Supply Current
EDO Page Mode
(t
RC
RC
HPC
OUT
OUT
= t
= t
= t
=
is Disabled, 0V
RC
RC
High-Z, CMOS interface)
HPC
min)
min)
min)
<=
RC
IH
V
,
CC
= 31.3us
CAS = V
D
D
IN
,
OUT
D
<=
OUT
- 0.2V, D
:
<=
t
OUT
RC
=
4.6V)
V
=
Parameter
=
=
Enable
High-Z)
OUT
,
High-Z, CMOS interface)
t
t
IH
IL
RC
OUT
RAS
OUT
<= 4.
OUT
min)
=
= -2mA
<=
CC
2
6V)
= High-Z)
mA)
0.3
= 3.3V+/-0.3V, V
us,
)
IL
IH
.
.
SS
50ns
60ns
50ns
60ns
50ns
60ns
70ns
70ns
70ns
50ns
60ns
70ns
= 0V, T
Min
2.4
-10
-10
0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
GM71VS17403CL
A
= 0 ~ 70C)
GM71V17403C
Max
V
100
100
100
100
300
200
0.4
90
80
90
80
90
80
75
90
80
10
10
2
5
1
CC
Unit
mA
mA
mA
mA
mA
mA
mA
uA
uA
uA
uA
uA
V
V
Note
1, 2
1, 3
4,5
5
5
2
1