SGP06N60_07 INFINEON [Infineon Technologies AG], SGP06N60_07 Datasheet

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SGP06N60_07

Manufacturer Part Number
SGP06N60_07
Description
Fast IGBT in NPT-technology
Manufacturer
INFINEON [Infineon Technologies AG]
Datasheet
Fast IGBT in NPT-technology
Type
SGP06N60
SGD06N60
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T
T
Pulsed collector current, t
Turn off safe operating area
V
Gate-emitter voltage
Avalanche energy, single pulse
I
start at T
Short circuit withstand time
V
Power dissipation
T
Operating junction and storage temperature
Soldering temperature,
PG-TO-252: (reflow soldering, MSL1)
Others: wavesoldering, 1.6mm (0.063 in.) from case for 10s
2
1)
C
C
C
C
CE
GE
J-STD-020 and JESD-022
75% lower E
Short circuit withstand time – 10 s
Designed for:
NPT-Technology for 600V applications offers:
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC
Complete product spectrum and PSpice Models:
Allowed number of short circuits: <1000; time between short circuits: >1s.
= 6 A, V
= 25 C
= 100 C
= 25 C
= 15V, V
600V, T
- Motor controls
- Inverter
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
combined with low conduction losses
j
= 25 C
CC
CC
= 50 V, R
j
off
compared to previous generation
150 C
600V, T
GE
600V
600V
j
V
p
= 25
CE
limited by T
1)
150 C
2
,
for target applications
6A
6A
I
C
jmax
V
CE(sat)150°C
2.3V
2.3V
http://www.infineon.com/igbt/
150 C
150 C
1
T
j
PG-TO-252-3-1 (D-PAK)
(TO-252AA)
Marking
G06N60
G06N60
Symbol
V
I
I
-
V
E
t
P
T
T
C
C p u l s
S C
j
s
C E
G E
A S
t o t
, T
s t g
PG-TO-220-3-1
PG-TO-252-3-11
PG-TO-220-3-1
(TO-220AB)
G
Package
-55...+150
SGD06N60
SGP06N60
Value
C
E
600
260
260
6.9
12
24
24
34
10
68
20
Rev. 2.2
V
A
V
mJ
W
Unit
C
s
Sep 07

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SGP06N60_07 Summary of contents

Page 1

Fast IGBT in NPT-technology 75% lower E compared to previous generation off combined with low conduction losses Short circuit withstand time – Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter ...

Page 2

Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient 1) SMD version, device on PCB Electrical Characteristic unless otherwise specified j Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation ...

Page 3

Switching Characteristic, Inductive Load Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Switching Characteristic, Inductive Load Parameter IGBT Characteristic Turn-on delay time Rise time ...

Page 4

I 30A 20A T =80° =110°C 10A 10Hz 100Hz 1kHz 10kHz f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (T 150 0. 400V, j ...

Page 5

V =20V GE 15V 10A 13V 11V COLLECTOR EMITTER VOLTAGE CE Figure 5. Typical output characteristics ( 20A 18A T =+25°C j ...

Page 6

I , COLLECTOR CURRENT C Figure 9. Typical switching times as a function of collector current (inductive load 150 ...

Page 7

E and E include losses on ts due to diode recovery. 0.6mJ 0.4mJ 0.2mJ 0.0mJ COLLECTOR CURRENT C Figure 13. Typical switching energy losses as a function of collector current (inductive load, ...

Page 8

Q , GATE CHARGE GE Figure 17. Typical gate charge ( 10V 11V 12V 13V ...

Page 9

PG-TO220-3-1 9 SGP06N60 SGD06N60 Rev. 2.2 Sep 07 ...

Page 10

P-TO252-3-11 10 SGP06N60 SGD06N60 Rev. 2.2 Sep 07 ...

Page 11

Figure A. Definition of switching times Figure B. Definition of switching losses SGP06N60 SGD06N60 ( Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance ...

Page 12

Edition 2006-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 9/12/07. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics ...

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