DMN2400UFB4-7 DIODES [Diodes Incorporated], DMN2400UFB4-7 Datasheet - Page 4

• Manufacturer Part Number: DMN2400UFB4-7
• Description: N-CHANNEL ENHANCEMENT MODE MOSFET
• Manufacturer: DIODES [Diodes Incorporated]

DMN2400UFB4
Document number: DS32025 Rev. 3 - 2
100,000
10,000
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
1.2
1.0
0.8
0.6
0.4
0.2
1,000
60
50
40
30
20
10
0
0
100
-50
0
10
1
2
-25
Fig. 11 Typical Gate-Source Leakage Current
V , DRAIN-SOURCE VOLTAGE (V)
T , AMBIENT TEMPERATURE (°C)
DS
A
V
T = 85°C
GS
5
A
0
4
Fig. 9 Typical Capacitance
, GATE-SOURCE VOLTAGE (V)
vs. Gate-Source Voltage
25
T = -55°C
T = 125°C
A
A
6
C
C
C
10
50
oss
iss
rss
I = 250µA
D
T = 150°C
A
T = 25°C
75
A
8
f = 1MHz
100
I = 1mA
15
D
10
125 150
20
www.diodes.com
12
4 of 6
100,000
1,000
10,000
1,000
1.6
1.2
0.8
0.4
2.0
100
10
100
0
1
10
0
1
2
2
Fig. 10 Typical Drain-Source Leakage Current
Fig. 8 Diode Forward Voltage vs. Current
Fig. 12 Typical Gate-Source Leakage Current
4
0.2
V , SOURCE-DRAIN VOLTAGE (V)
V , DRAIN-SOURCE VOLTAGE (V)
T = 85°C
SD
DS
A
V
GS
6
4
, GATE-SOURCE VOLTAGE (V)
vs. Drain-Source Voltage
0.4
T = 125°C
vs. Gate-Source Voltage
T = -55°C
8
A
T = -55°C
A
A
6
10
0.6
T = 150°C
A
T = 25°C
T = 150°C
T = 125°C
A
A
A
12
T = 85°C
A
T = 25°C
T = 25°C
A
A
8
DMN2400UFB4
0.8
14
16
1.0
10
© Diodes Incorporated
18
October 2010
1.2
20
12