DMN2400UFB4-7 DIODES [Diodes Incorporated], DMN2400UFB4-7 Datasheet - Page 3

• Manufacturer Part Number: DMN2400UFB4-7
• Description: N-CHANNEL ENHANCEMENT MODE MOSFET
• Manufacturer: DIODES [Diodes Incorporated]

DMN2400UFB4
Document number: DS32025 Rev. 3 - 2
2.0
1.5
1.0
0.5
0.8
0.6
0.4
0.2
1.6
1.4
1.2
1.0
0.8
0.6
0
0
-50
0
0
Fig. 5 On-Resistance Variation with Temperature
-25
I , DRAIN-SOURCE CURRENT (A)
T , JUNCTION TEMPERATURE (°C)
vs. Drain Current and Gate Voltage
D
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
0.4
V
V
J
1
GS
DS
GS
V
Fig. 3 Typical On-Resistance
GS
= 1.8V
= 2.5V
V
0
GS
= 4.5V
= 2.0V
0.8
25
2
50
V
V
1.2
GS
GS
3
75
= 2.5V
= 4.5V
V
I = 1.0A
GS
D
= 4.5V
100
V
V
V
GS
GS
GS
1.6
V
I = 500mA
4
D
GS
= 1.8V
= 1.5V
= 1.2V
= 2.5.V
125 150
2
5
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0.8
0.6
0.4
0.2
1.5
1.0
0.5
0.8
0.6
0.4
0.2
0
-50
0
0
0
0
Fig. 6 On-Resistance Variation with Temperature
-25
Fig. 4 Typical Drain-Source On-Resistance
V
V
GS
DS
0.25
Fig. 2 Typical Transfer Characteristics
0.5
V
I = 500mA
T , JUNCTION TEMPERATURE (°C)
D
V
GS
J
= 4.5V
= 5V
vs. Drain Current and Temperature
GS
T = 85°C
V
I = 1.0A
A
GS
= 2.5V
D
T = 125°C
, GATE SOURCE VOLTAGE (V)
0
A
= 4.5V
T = 150°C
I , DRAIN CURRENT (A)
D
A
0.50
1
25
T = -55°C
0.75
1.5
50
A
T = 25°C
A
75
1.00
T = 85°C
T = 25°C
T = -55°C
DMN2400UFB4
T = 150°C
T = 125°C
2
A
A
A
A
A
100
1.25
2.5
125 150
© Diodes Incorporated
October 2010
1.50
3