HMC591LP5E HITTITE [Hittite Microwave Corporation], HMC591LP5E Datasheet - Page 4

• Manufacturer Part Number: HMC591LP5E
• Description: GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz
• Manufacturer: HITTITE [Hittite Microwave Corporation]

Gain & Power vs. Supply Current @ 8 GHz
Reverse Isolation
vs. Temperature, 7V @ 1340 mA
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
Gate Bias Voltage (Vgg)
RF Input Power (RFin)(Vdd = +7.0 Vdc)
Channel Temperature
Continuous Pdiss (T= 75 °C)
(derate 104.3 mW/°C above 75 °C)
Thermal Resistance
(channel to package bottom)
Storage Temperature
Operating Temperature
-10
-20
-30
-40
-50
-60
-70
-80
36
34
32
30
28
26
24
22
20
18
16
0
940
6
6.5
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
7
Idd SUPPLY CURRENT (mA)
FREQUENCY (GHz)
7.5
1140
8
+25C
+85C
Gain
P1dB
Psat
-40C
8.5
+8 Vdc
-2.0 to 0 Vdc
+15 dBm
175 °C
10.43 W
9.59 °C/W
-65 to +150 °C
-40 to +85 °C
v02.0107
9
Order On-line at www.hittite.com
9.5
1340
10
POWER AMPLIFIER, 6.0 - 9.5 GHz
Gain & Power vs. Supply Voltage @ 8 GHz
Power Dissipation
Typical Supply Current vs. Vdd
Note: Amplifier will operate over full voltage ranges shown
above Vgg adjusted to achieve Idd = 1340 mA at +7.0V
9.5
8.5
7.5
6.5
36
34
32
30
28
26
24
22
20
18
16
10
9
8
7
6
6.5
-14 -12 -10 -8
HMC591LP5 / 591LP5E
GaAs PHEMT MMIC 2 WATT
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Vdd (V)
+6.5
+7.0
+7.5
Vdd SUPPLY VOLTAGE (Vdc)
-6
INPUT POWER (dBm)
-4
10 GHz
6 GHz
7 GHz
8 GHz
9 GHz
-2
7
0
2
Gain
P1dB
Psat
4
6
Idd (mA)
1350
1340
1330
8
10 12 14
7.5
5 - 601
5