H5PS5162FFR-S5 HYNIX [Hynix Semiconductor], H5PS5162FFR-S5 Datasheet - Page 8

• Manufacturer Part Number: H5PS5162FFR-S5
• Description: 512Mb DDR2 SDRAM
• Manufacturer: HYNIX [Hynix Semiconductor]

Rev. 1.0 / July. 2008
2. Maximum DC Ratings
2.1 Absolute Maximum DC Ratings
2.2 Operating Temperature Condition
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement
1. Operating Temperature is the case surface temperature on the center/top side of the DRAM. For the measure-
2. At tOPER 85~95℃, Double refresh rate(tREFI: 3.9us) is required, and to enter the self refresh mode at this tem-
V
Symbol
Symbol
IN,
VDDQ
VDDL
tOPER
T
VDD
I
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
conditions. Please refer to JESD51-2 standard.
ment conditions, please refer to JESD51-2 standard.
perature range it must be required an EMRS command to change itself refresh rate.
STG
I
OZ
V
I
OUT
Voltage on VDD pin relative to Vss
Voltage on VDDQ pin relative to Vss
Voltage on VDDL pin relative to Vss
Voltage on any pin relative to Vss
Storage Temperature
Input leakage current; any input 0V VIN VDD;
all other balls not under test = 0V)
Output leakage current; 0V VOUT VDDQ; DQ
and ODT disabled
Operating Temperature
Parameter
Parameter
Industrial Temp
Normal Temp
- 1.0 V ~ 2.3 V
- 0.5 V ~ 2.3 V
- 0.5 V ~ 2.3 V
- 0.5 V ~ 2.3 V
-2 uA ~ 2 uA
-5 uA ~ 5 uA
-55 to +100
Rating
-40 to 85
Rating
0 to 95
H5PS5162FFR series
Units
Units
°C
°C
uA
uA
℃
V
V
V
V
Release
Notes
Notes
1, 2
1,2
1,2
1
1
1
1
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