HMC580ST89E HITTITE [Hittite Microwave Corporation], HMC580ST89E Datasheet

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HMC580ST89E

Manufacturer Part Number
HMC580ST89E
Description
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 1.0 GHz
Manufacturer
HITTITE [Hittite Microwave Corporation]
Datasheet

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5
Typical Applications
The HMC580ST89 / HMC580ST89E is an ideal RF/IF
gain block & LO or PA driver:
• Cellular / PCS / 3G
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
• IF & RF Applications
Functional Diagram
Note: Data taken with broadband bias tee on device output.
Electrical Specifications,
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
Noise Figure
Supply Current (Icq)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Parameter
Vs= 5.0 V, Rbias= 1.8 Ohm, T
v00.1106
Order On-line at www.hittite.com
HMC580ST89
0.25 - 0.50 GHz
0.50 - 1.00 GHz
0.25 - 0.50 GHz
0.50 - 1.00 GHz
0.50 - 1.00 GHz
0.25 - 0.50 GHz
0.50 - 1.00 GHz
0.25 - 0.50 GHz
0.50 - 1.00 GHz
DC - 0.25 GHz
DC - 0.25 GHz
DC - 0.50 GHz
DC - 0.25 GHz
DC - 0.25 GHz
DC - 1.0 GHz
DC - 1.0 GHz
DC - 1.0 GHz
Features
P1dB Output Power: +22 dBm
Gain: 22 dB
Output IP3: +37 dBm
Cascadable 50 Ohm I/Os
Single Supply: +5V
Industry Standard SOT89 Package
General Description
The HMC580ST89 & HMC580ST89E are InGaP
Heterojunction
Block MMIC SMT amplifi ers covering DC to 1 GHz.
Packaged in an industry standard SOT89, the
amplifi er can be used as a cascadable 50 Ohm RF
or IF gain stage as well as a PA or LO driver with
up to +26 dBm output power. The HMC580ST89(E)
offers 22 dB of gain with a +37 dBm output IP3 at 250
MHz, and can operate directly from a +5V supply. The
HMC580ST89(E) exhibits excellent gain and output
power stability over temperature, while requiring a
minimal number of external bias components.
MMIC AMPLIFIER, DC - 1.0 GHz
A
= +25° C
InGaP HBT GAIN BLOCK
Min.
18.5
17.5
19
15
19
16
Bipolar
0.005
Typ.
20.5
2.8
/
22
21
17
35
28
19
12
11
23
22
19
37
35
33
88
Transistor
580ST89E
Max.
(HBT)
dB/ °C
Units
dBm
dBm
dBm
dBm
dBm
dBm
mA
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
Gain

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HMC580ST89E Summary of contents

Page 1

... Typical Applications The HMC580ST89 / HMC580ST89E is an ideal RF/IF gain block & driver: • Cellular / PCS / 3G • Fixed Wireless & WLAN • CATV, Cable Modem & DBS • Microwave Radio & Test Equipment • IF & RF Applications Functional Diagram Electrical Specifications, Gain Gain Variation Over Temperature ...

Page 2

Broadband Gain & Return Loss S21 0 S11 S22 -5 -10 -15 -20 -25 -30 -35 -40 0 0.5 1 1.5 2 FREQUENCY (GHz) Input Return Loss vs. Temperature 0 -5 +25C +85C -10 ...

Page 3

P1dB vs. Temperature 0.3 0.5 FREQUENCY (GHz) Output IP3 vs. Temperature 0.3 0.5 FREQUENCY (GHz) Vcc vs. ...

Page 4

... Package Information Part Number Package Body Material HMC580ST89 Low Stress Injection Molded Plastic HMC580ST89E RoHS-compliant Low Stress Injection Molded Plastic [1] Max peak refl ow temperature of 235 °C [2] Max peak refl ow temperature of 260 °C [3] 4-Digit lot number XXXX For price, delivery, and to place orders, please contact Hittite Microwave Corporation: ...

Page 5

Pin Descriptions Pin Number Function OUT 2, 4 GND Application Circuit Recommended Bias Resistor Values for Icc = 88 mA, Rbias = (Vs - Vcc) / Icc, Vs > +5V Supply Voltage (Vs BIAS ...

Page 6

... C5 2.2 μF Capacitor, Tantalum R1 Resistor, 1206 Pkg. L1 Inductor, 0603 Pkg. U1 HMC580ST89 / HMC580ST89E [2] PCB 107368 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 [3] Evaluation board tuned for 900 MHz operation For price, delivery, and to place orders, please contact Hittite Microwave Corporation: ...

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