HMC566_09 HITTITE [Hittite Microwave Corporation], HMC566_09 Datasheet - Page 4

• Manufacturer Part Number: HMC566_09
• Description: GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 29 - 36 GHz
• Manufacturer: HITTITE [Hittite Microwave Corporation]

Absolute Maximum Ratings
Outline Drawing
Die Packaging Information
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
Drain Bias Voltage (Vdd1, 2, 3, 4)
RF Input Power (RFIN)(Vdd = +3.0 Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 9.6 mW/°C above 85 °C)
Thermal Resistance
(channel to die bottom)
Storage Temperature
Operating Temperature
GP-2 (Gel Pack)
Standard
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Alternate
+3.5 Vdc
+5 dBm
175 °C
0.82 W
104.2 °C/W
-65 to +150 °C
-55 to +85 °C
v00.0306
[2]
Order On-line at www.hittite.com
[1]
Typical Supply Current vs. Vdd
Note: Amplifi er will operate over full voltage ranges shown
above.
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
GaAs PHEMT MMIC LOW NOISE
Vdd (Vdc)
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
+3.5
+2.5
+3.0
AMPLIFIER, 29 - 36 GHz
HMC566
Idd (mA)
77
80
83
1 - 93
1