HMC562_08 HITTITE [Hittite Microwave Corporation], HMC562_08 Datasheet

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HMC562_08

Manufacturer Part Number
HMC562_08
Description
GaAs PHEMT MMIC WIDEBAND DRIVER AMPLIFIER, 2 - 35 GHz
Manufacturer
HITTITE [Hittite Microwave Corporation]
Datasheet
2 - 34
2
Typical Applications
The HMC562 wideband driver is ideal for:
• Military & Space
• Test Instrumentation
• Fiber Optics
Functional Diagram
Electrical Specifi cations,
* Adjust Vgg between -2 to 0V to achieve Idd= 80 mA typical.
Frequency Range
Gain
Gain Flatness
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current
(Idd) (Vdd= 8V, Vgg = -0.8V Typ.)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
Parameter
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
T
A
v04.1108
= +25° C, Vdd= +8V, Idd= 80 mA*
Min.
9.5
15
Order On-line at www.hittite.com
2.0 - 15.0
±0.4
Typ.
12.5
0.01
21.5
14
16
18
27
80
3
Max.
0.02
100
Features
P1dB Output Power: +18 dBm
Gain: 12.5 dB
Output IP3: +27 dBm
Supply Voltage: +8V @ 80 mA
50 Ohm Matched Input/Output
Die Size: 3.12 x 1.42 x 0.1 mm
General Description
The HMC562 is a GaAs MMIC PHEMT Distributed
Driver Amplifi er die which operates between 2 and
35 GHz. The amplifi er provides 12.5 dB of gain,
+19 dBm output IP3 and +12 dBm of output power
at 1 dB gain compression while requiring 80 mA
from a +8V supply. The HMC562 is ideal for EW,
ECM and radar driver amplifi er applications. The
HMC562 amplifi er I/O’s are DC blocked and internally
matched to 50 Ohms facilitating integration into Multi-
Chip-Modules (MCMs). All data is taken with the chip
connected via two 0.075mm (3 mil) ribbon bonds of
minimal length 0.31mm (12 mils).
Min.
8.5
14
GaAs PHEMT MMIC WIDEBAND
DRIVER AMPLIFIER, 2 - 35 GHz
15.0 - 27.0
±0.35
0.01
Typ.
3.5
12
13
15
17
20
24
80
Max.
0.02
100
Min.
10
7
27.0 - 35.0
HMC562
0.02
Typ.
±1.3
10
10
12
14
16
22
80
5
Max.
0.03
100
dB/ °C
Units
GHz
dBm
dBm
dBm
mA
dB
dB
dB
dB
dB

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HMC562_08 Summary of contents

Page 1

Typical Applications 2 The HMC562 wideband driver is ideal for: • Military & Space • Test Instrumentation • Fiber Optics Functional Diagram Electrical Specifi cations, Parameter Frequency Range Gain Gain Flatness Gain Variation Over Temperature Input Return Loss Output Return ...

Page 2

Gain & Return Loss S21 S11 S22 0 -5 -10 -15 -20 - FREQUENCY (GHz) Input Return Loss vs. Temperature 0 +25C -5 +85C -55C -10 -15 -20 -25 ...

Page 3

P1dB vs. Temperature FREQUENCY (GHz) Output IP3 vs. Temperature FREQUENCY (GHz) Power Compression @ 10 GHz 24 ...

Page 4

Absolute Maximum Ratings Drain Bias Voltage (Vdd) +10 Vdc Gate Bias Voltage (Vgg) -2 Vdc RF Input Power (RFIN)(Vdd = +10 Vdc) +23 dBm Channel Temperature 175 °C Continuous Pdiss (T= 85 °C) 2.3 W (derate 26 ...

Page 5

Outline Drawing 2 Die Packaging Information Standard GP-2 [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: ...

Page 6

Pad Descriptions Pad Number Function Vdd External bypass capacitors are required. 3 OUT 4 Vgg Please follow “MMIC Amplifi er Biasing Procedure” Die Bottom GND Die bottom must be connected to RF/DC ground. For price, delivery, ...

Page 7

Assembly Diagram 2 Application Circuit For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 v04.1108 GaAs PHEMT MMIC WIDEBAND DRIVER AMPLIFIER ...

Page 8

Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) ...

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