HMC560_09 HITTITE [Hittite Microwave Corporation], HMC560_09 Datasheet

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HMC560_09

Manufacturer Part Number
HMC560_09
Description
GaAs MMIC FUNDAMENTAL MIXER, 24 - 40 GHz
Manufacturer
HITTITE [Hittite Microwave Corporation]
Datasheet
4 - 78
4
Typical Applications
The HMC560 is ideal for:
• Test Equipment & Sensors
• Microwave Point-to-Point Radios
• Point-to-Multi-Point Radios
• Military & Space
Functional Diagram
Electrical Specifi cations,
Frequency Range, RF & LO
Frequency Range, IF
Conversion Loss
Noise Figure (SSB)
LO to RF Isolation
LO to IF Isolation
RF to IF Isolation
IP3 (Input)
IP2 (Input)
1 dB Compression (Input)
* Unless otherwise noted, all measurements performed as downconverter
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Parameter
v01.0408
T
A
= +25° C, IF = 1GHz, LO = +13 dBm*
Order On-line at www.hittite.com
Min.
27
29
17
DC - 18
24 - 36
Typ.
35
32
22
19
50
13
8
8
Features
Wide IF Bandwidth: DC - 18 GHz
Input IP3: +21 dBm
High LO/RF Isolation: 35 dB
Passive Double Balanced Topology
Compact Size: 1.15 x 0.78 x 0.1 mm
General Description
The HMC560 chip is a miniature passive double bal-
anced mixer which is fabricated in a GaAs MESFET
process, and can be used as an upconverter or down-
converter from 24-40 GHz in a small chip area. The
wide bandwidth allows this device to be used across
multiple radio bands with a common platform. Excel-
lent isolations are provided by on-chip baluns, and
the chip requires no external components and no
DC bias. Measurements were made with the chip
mounted and ribbon bonded into in a 50-ohm micro-
strip test fi xture. Measured data includes the parasitic
effects of the assembly. RF connections to the chip
were made with 0.076mm (3-mil) ribbon bond with
minimal length <0.31mm (<12 mil).
Max.
GaAs MMIC FUNDAMENTAL
10
10
Min.
20
18
21
MIXER, 24 - 40 GHz
DC - 18
36 - 40
Typ.
10
10
35
33
21
50
15
HMC560
Max.
13
13
Units
GHz
GHz
dBm
dBm
dBm
dB
dB
dB
dB
dB

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HMC560_09 Summary of contents

Page 1

Typical Applications The HMC560 is ideal for: • Test Equipment & Sensors • Microwave Point-to-Point Radios • Point-to-Multi-Point Radios • Military & Space 4 Functional Diagram Electrical Specifi cations, Parameter Frequency Range, RF & LO Frequency Range, IF Conversion Loss ...

Page 2

Conversion Gain vs. Temperature @ LO = +13 dBm 0 -5 -10 +25 C -15 +85 C - FREQUENCY (GHz) Conversion Gain vs. LO Drive 0 -5 ...

Page 3

Input IP3 vs. LO Drive * FREQUENCY (GHz) Input IP2 vs. LO Drive * ...

Page 4

Absolute Maximum Ratings Input +25 dBm LO Drive +23 dBm IF DC Current ±2 mA Channel Temperature 150 °C/W Continuous Pdiss (T= 85 °C ) 0.961 W (derate 14.79 mW/ °C above 85 °C) Thermal Resistance ...

Page 5

Pad Descriptions Pad Number Function GND Assembly Drawing For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 ...

Page 6

Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) ...

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