K6R4004C1C-C10 SAMSUNG [Samsung semiconductor], K6R4004C1C-C10 Datasheet - Page 4

• Manufacturer Part Number: K6R4004C1C-C10
• Description: 1Mx4 Bit High Speed Static RAM(5V Operating).
• Manufacturer: SAMSUNG [Samsung semiconductor]

K6R4004C1C-C, K6R4004C1C-I, K6R4004C1C-E
TEST CONDITIONS*
* The above test conditions are also applied at extended and industrial temperature range.
READ CYCLE*
* The above parameters are also guaranteed at extended and industrial temperature range.
AC CHARACTERISTICS
Read Cycle Time
Address Access Time
Chip Select to Output
Output Enable to Valid Output
Chip Enable to Low-Z Output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Output Hold from Address Change
Chip Selection to Power Up Time
Chip Selection to Power DownTime
Input Pulse Levels
Input Rise and Fall Times
Input and Output timing Reference Levels
Output Loads
Output Loads(A)
D
* Capacitive Load consists of all components of the
OUT
test environment.
Parameter
Z
O
= 50
Parameter
(T
A
Symbol
=0 to 70 C, V
t
t
R
t
t
t
t
t
t
OHZ
t
t
t
OLZ
RC
CO
OE
OH
AA
HZ
PU
PD
LZ
L
= 50
30pF*
K6R4004C1C-10
Min
10
3
0
0
0
3
0
-
-
-
-
CC
V
L
=5.0V 10%, unless otherwise noted.)
= 1.5V
Max
10
10
10
5
5
5
-
-
-
-
-
- 4 -
Output Loads(B)
for t
K6R4004C1C-12
Min
12
3
0
0
0
3
0
-
-
-
-
HZ
, t
LZ
* Including Scope and Jig Capacitance
, t
Max
WHZ
12
12
12
6
6
6
-
-
-
-
-
, t
OW
D
255
OUT
K6R4004C1C-15
, t
Min
15
3
0
0
0
3
0
OLZ
-
-
-
-
See below
0V to 3V
Value
& t
1.5V
3ns
OHZ
Max
15
15
15
7
7
7
-
-
-
-
-
PRELIMINARY
CMOS SRAM
K6R4004C1C-20
Min
20
3
0
0
0
3
0
-
-
-
-
+5.0V
480
5pF*
Max
20
20
20
8
9
9
-
-
-
-
-
March 2000
Rev 3.0
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns