K6T4008U1C-F SAMSUNG [Samsung semiconductor], K6T4008U1C-F Datasheet - Page 6

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K6T4008U1C-F

Manufacturer Part Number
K6T4008U1C-F
Description
512Kx8 bit Low Power and Low Voltage CMOS Static RAM
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
K6T4008V1C, K6T4008U1C Family
TIMMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1)
TIMING WAVEFORM OF READ CYCLE(2)
Address
Data Out
NOTES (READ CYCLE)
1.
2. At any given temperature and voltage condition,
Address
CS
OE
Data out
t
HZ
levels.
interconnection.
and
t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
Previous Data Valid
High-Z
t
LZ
t
t
OLZ
t
HZ
(Address Controlled
(WE=V
OH
(Max.) is less than
t
AA
t
CO1
IH
t
)
OE
t
AA
6
,
t
RC
CS=OE=V
t
t
RC
LZ
(Min.) both for a given device and from device to device
IL
, WE=V
Data Valid
IH
)
Data Valid
t
t
OHZ
OH
t
CMOS SRAM
HZ
January 1999
Revision 1.0

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