K6T4008U1C-F SAMSUNG [Samsung semiconductor], K6T4008U1C-F Datasheet - Page 2

• Manufacturer Part Number: K6T4008U1C-F
• Description: 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
• Manufacturer: SAMSUNG [Samsung semiconductor]

K6T4008V1C, K6T4008U1C Family
FEATURES
PRODUCT FAMILY
1. The paramerter is measured with 30pF test load.
512K 8 bit Low Power and Low Voltage CMOS Static RAM
I/O1
I/O2
I/O3
VSS
VCC
PIN DESCRIPTION
A16
A14
A12
A18
A13
A15
A18
A14
K6T4008V1C-B
K6T4008U1C-B
K6T4008V1C-F
K6T4008U1C-F
A11
A17
A16
A12
A
WE
K6T4008V1C Family: 3.0~3.6V
K6T4008U1C Family: 2.7~3.3V
A7
A6
A5
A4
A3
A2
A1
A0
A9
Name
A7
A6
A5
A4
Process Technology: TFT
Organization: 512K 8
Power Supply Voltage
Low Data Retention Voltage: 2V(Min)
Three state output and TTL Compatible
Package Type: 32-SOP-525, 32-TSOP2-400F/R
A8
0
WE
CS
OE
~A
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
Product Family
18
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32-TSOP2
(Forward)
Function
Address Inputs
Write Enable Input
Chip Select Input
Output Enable Input
32-SOP
32-TSOP1-0820F, 32-TSOP1-0813.4F
32-
32-TSOP1
(Forward)
S
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
TSOP1
Operating Temperature Vcc Range
VCC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
Commercial(0~70 C)
Industrial(-40~85 C)
I/O
WE
CS
I/O8
I/O7
I/O6
I/O5
I/O4
VCC
A17
OE
A15
A13
A11
A10
A8
A9
Name
Vcc
Vss
1
~I/O
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
8
32-TSOP2
(Reverse)
OE
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
VSS
I/O3
I/O2
I/O1
A0
A1
A2
A3
Function
Power
Ground
Data Inputs/Outputs
10
11
12
13
14
15
16
1
2
3
4
5
6
7
8
9
3.0~3.6V
2.7~3.3V
3.0~3.6V
2.7~3.3V
VSS
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
70
70
70
70
GENERAL DESCRIPTION
SAMSUNG s advanced CMOS process technology. The fami-
lies support various operating temperature range and have var-
ious package type for user flexibility of system design. The
families also support low data retention voltage for battery
back-up operation with low data retention current.
1)
1)
FUNCTIONAL BLOCK DIAGRAM
The K6T4008V1C and K6T4008U1C families are fabricated by
2
Speed
/85/100ns
/85/100ns
1)
1)
I/O
I/O
/85ns
/85ns
CS
WE
OE
1
8
A0
A1
A4
A5
A6
A7
A12
A14
A16
A18
Control
logic
(I
Standby
SB1
Clk gen.
15 A
20 A
Power Dissipation
, Max)
Data
cont
Data
cont
Row
select
(I
Operating
A2 A3 A8 A9 A10
CC2
30mA
, Max)
Precharge circuit.
CMOS SRAM
Memory array
1024 rows
512 8 columns
Column select
I/O Circuit
A11
32-SOP
32-TSOP2-F/R
32-TSOP1-F
32-sTSOP1-F
A13
PKG Type
A15
January 1999
Revision 1.0
A17