K7N163631B-QFCI25 SAMSUNG [Samsung semiconductor], K7N163631B-QFCI25 Datasheet - Page 12

• Manufacturer Part Number: K7N163631B-QFCI25
• Description: 512Kx36 & 1Mx18 Pipelined NtRAM
• Manufacturer: SAMSUNG [Samsung semiconductor]

K7N163631B
K7N161831B
TEST CONDITIONS
* The above parameters are also guaranteed at industrial temperature range.
DC ELECTRICAL CHARACTERISTICS
Notes : 1. The above parameters are also guaranteed at industrial temperature range.
Input Leakage Current(except ZZ)
Output Leakage Current
Operating Current
Standby Current
Output Low Voltage(3.3V I/O)
Output High Voltage(3.3V I/O)
Output Low Voltage(2.5V I/O)
Output High Voltage(2.5V I/O)
Input Low Voltage(3.3V I/O)
Input High Voltage(3.3V I/O)
Input Low Voltage(2.5V I/O)
Input High Voltage(2.5V I/O)
Input Pulse Level(for 3.3V I/O)
Input Pulse Level(for 2.5V I/O)
Input Rise and Fall Time(Measured at 20% to 80% for 3.3/2.5V I/O)
Input and Output Timing Reference Levels for 3.3V I/O
Input and Output Timing Reference Levels for 2.5V I/O
Output Load
2. Reference AC Operating Conditions and Characteristics for input and timing.
3. Data states are all zero.
4. In Case of I/O Pins, the Max. V
PARAMETER
PARAMETER
IH
SYMBOL
=V
V
V
I
I
V
V
I
V
V
DDQ
I
I
V
V
SB1
SB2
I
CC
OL
SB
OH
OH
IL
OL
OL
IH
IH
IL
IL
+0.3V
V
Output Disabled, V
Device Selected, I
ZZ V
Device deselected, I
f=Max, All Inputs 0.2V or
Device deselected, I
f=0, All Inputs=fixed (V
Device deselected, I
f=Max, All Inputs V
I
I
I
I
OL
OH
OL
OH
DD
=8.0mA
=1.0mA
=-4.0mA
=-1.0mA
=Max ; V
IL ,
Cycle Time
TEST CONDITIONS
IN
512Kx36 & 1Mx18 Pipelined NtRAM
=V
- 12 -
SS
OUT
out
IL
OUT
to V
OUT
OUT
=V
or V
=0mA,
t
CYC
DD
=0mA, ZZ V
=0mA, ZZ V
=0mA, ZZ 0.2V,
SS
DD
-0.2V or 0.2V)
Min
to V
IH
V
DD
DDQ
-0.2V
DD
IL
,
-0.2V,
-25
-16
-0.3*
-0.3*
MIN
2.4
2.0
2.0
1.7
-2
-2
-
-
-
-
-
-
-
See Fig. 1
V
V
0 to 3.0V
0 to 2.5V
VALUE
1.0V/ns
V
DD
DD
MAX
1.5V
DDQ
360
300
170
150
130
0.4
0.4
0.8
0.7
+2
+2
+0.3**
+0.3**
-
-
Preliminary
/2
UNIT NOTES
mA
mA
mA
mA
V
V
V
V
V
V
V
V
A
A
Jan. 2005
Rev 0.4
1,2
3
3
TM