K7N161801-FC13 SAMSUNG [Samsung semiconductor], K7N161801-FC13 Datasheet - Page 9

• Manufacturer Part Number: K7N161801-FC13
• Description: 512Kx36 & 1Mx18-Bit Flow Through NtRAM
• Manufacturer: SAMSUNG [Samsung semiconductor]

ASYNCHRONOUS TRUTH TABLE
OPERATING CONDITIONS at 3.3V I/O
* The above parameters are also guaranteed at industrial temperature range.
OPERATING CONDITIONS at 2.5V I/O
* The above parameters are also guaranteed at industrial temperature range.
K7M163625A
K7M161825A
ABSOLUTE MAXIMUM RATINGS*
*Notes : Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only
CAPACITANCE*
*Note : Sampled not 100% tested.
Voltage on V
Voltage on Any Other Pin Relative to V
Power Dissipation
Storage Temperature
Operating Temperature
Storage Temperature Range Under Bias
Supply Voltage
Ground
Supply Voltage
Ground
Input Capacitance
Output Capacitance
and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Sleep Mode
Deselected
PARAMETER
PARAMETER
PARAMETER
Operation
Read
Write
DD
Supply Relative to V
(T
A
=25 C, f=1MHz)
PARAMETER
ZZ
H
L
L
L
L
SS
SYMBOL
SYMBOL
SYMBOL
SS
V
V
C
V
V
OE
V
V
C
DDQ
DDQ
X
H
X
X
OUT
L
DD
DD
SS
SS
I N
I/O STATUS
Din, High-Z
High-Z
High-Z
High-Z
512Kx36 & 1Mx18 Flow-Through NtRAM
D Q
(0 C
(0 C
Commercial
Industrial
TEST CONDITION
3.135
3.135
3.135
2.375
MIN
MIN
T
T
0
0
V
A
A
- 9 -
V
OUT
IN
=0V
70 C)
70 C)
Notes
1. X means "Don t Care".
2. Sleep Mode means power Sleep Mode of which stand-by current does
3. Deselected means power Sleep Mode of which stand-by current
=0V
not depend on cycle time.
depends on cycle time.
SYMBOL
T
T
T
T
V
V
P
BIAS
STG
OPR
OPR
DD
I N
D
Typ.
Typ.
3.3
3.3
3.3
2.5
0
0
MIN
-
-
-0.3 to V
-0.3 to 4.6
-65 to 150
RATING
-40 to 85
-10 to 85
0 to 70
3.465
3.465
3.465
MAX
MAX
1.6
2.9
0
0
DD
MAX
+0.3
5
7
UNIT
UNIT
UNIT
UNIT
V
V
V
V
V
V
W
Nov. 2003
V
V
pF
pF
C
C
C
C
Rev 3.0
TM