K6R1008V1B SAMSUNG [Samsung semiconductor], K6R1008V1B Datasheet - Page 8

• Manufacturer Part Number: K6R1008V1B
• Description: 128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges
• Manufacturer: SAMSUNG [Samsung semiconductor]

DATA RETENTION WAVE FORM
K6R1008V1B-C/B-L, K6R1008V1B-I/B-P
FUNCTIONAL DESCRIPTION
* X means Don t Care.
DATA RETENTION CHARACTERISTICS*
* The above parameters are also guaranteed at industrial temperature range.
Data Retention Characteristic is for L-ver only.
V
Data Retention Current
Data Retention Set-Up Time
Recovery Time
CS controlled
CC
CS
H
L
L
L
V
3.0V
V
V
CS
GND
for Data Retention
CC
IH
DR
Parameter
WE
X
H
H
L
OE
X*
H
X
L
Symbol
t
t
V
I
SDR
RDR
DR
t
DR
SDR
Output Disable
Not Select
CS V
V
V
V
V
See Data Retention
Wave form(below)
CC
IN
CC
IN
Mode
Read
Write
(T
=3.0V, CS V
=2.0V, CS V
V
V
A
CC
CC
CC
=0 to 70 C)
Test Condition
- 8 -
-0.2V
-0.2V or V
-0.2V or V
Data Retention Mode
CS V
CC
CC
IN
IN
-0.2V
-0.2V
CC
0.2V
0.2V
- 0.2V
I/O Pin
High-Z
High-Z
D
D
OUT
IN
Min.
2.0
0
5
-
-
Typ.
PRELIMINARY
-
-
-
-
-
CMOS SRAM
t
RDR
Preliminary
Supply Current
Max.
I
3.6
0.5
0.4
SB
-
-
I
I
I
, I
CC
CC
CC
August 1998
SB1
Rev 2.1
Unit
mA
ms
ns
V