K6R1008V1B SAMSUNG [Samsung semiconductor], K6R1008V1B Datasheet - Page 4

• Manufacturer Part Number: K6R1008V1B
• Description: 128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges
• Manufacturer: SAMSUNG [Samsung semiconductor]

K6R1008V1B-C/B-L, K6R1008V1B-I/B-P
AC CHARACTERISTICS
TEST CONDITIONS*
* The above test conditions are also applied at industrial temperature range.
Output Loads(A)
D
READ CYCLE*
* The above parameters are also guaranteed at industrial temperature range.
* Capacitive Load consists of all components of the
Read Cycle Time
Address Access Time
Chip Select to Output
Output Enable to Valid Output
Chip Enable to Low-Z Output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Output Hold from Address Change
Chip Selection to Power Up Time
Chip Selection to Power DownTime
OUT
Input Pulse Levels
Input Rise and Fall Times
Input and Output timing Reference Levels
Output Loads
test environment.
Z
O
Parameter
= 50
Parameter
(T
A
=0 to 70 C, V
R
L
= 50
30pF*
Symbol
t
t
t
t
t
t
t
t
OHZ
t
t
t
OLZ
RC
CO
OE
OH
AA
HZ
PU
PD
LZ
V
L
CC
= 1.5V
=3.3 0.3V, unless otherwise noted.)
K6R1008V1B-8
Min
8
3
0
0
0
3
0
-
-
-
-
- 4 -
Output Loads(B)
for t
Max
8
8
4
4
4
8
-
-
-
-
-
HZ
, t
LZ
* Including Scope and Jig Capacitance
, t
WHZ
K6R1008V1B-10
Min
10
3
0
0
0
3
0
-
-
-
-
, t
OW
D
OUT
, t
353
OLZ
Max
See below
10
10
10
5
5
5
& t
0V to 3V
-
-
-
-
-
Value
1.5V
3ns
OHZ
PRELIMINARY
K6R1008V1B-12
CMOS SRAM
Min
12
3
0
0
0
3
0
-
-
-
-
Preliminary
+3.3V
319
5pF*
Max
12
12
12
August 1998
6
6
6
-
-
-
-
-
Rev 2.1
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns