K6R1008C1D SAMSUNG [Samsung semiconductor], K6R1008C1D Datasheet - Page 5

• Manufacturer Part Number: K6R1008C1D
• Description: 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
• Manufacturer: SAMSUNG [Samsung semiconductor]

K6R1016V1D
DC AND OPERATING CHARACTERISTICS*
* The above parameters are also guaranteed at industrial temperature range.
CAPACITANCE*
* Capacitance is sampled and not 100% tested.
AC CHARACTERISTICS
TEST CONDITIONS*
* The above test conditions are also applied at industrial temperature range.
Input/Output Capacitance
Input Capacitance
Input Pulse Levels
Input Rise and Fall Times
Input and Output timing Reference Levels
Output Loads
Input Leakage Current
Output Leakage Current
Operating Current
Standby Current
Output Low Voltage Level
Output High Voltage Level
D
Output Loads(A)
* Capacitive Load consists of all components of the
OUT
test environment.
Parameter
Item
Z
O
= 50
(T
A
Parameter
=25 C, f=1.0MHz)
Symbol
V
I
V
I
I
I
SB1
I
CC
LO
SB
(T
OH
LI
OL
A
=0 to 70 C, Vcc=3.3V+0.3V/-0.15V, unless otherwise noted.)
Symbol
R
V
CS=V
V
Min. Cycle, 100% Duty
CS=V
Min. Cycle, CS=V
f=0MHz, CS V
V
I
I
L
C
OL
OH
C
IN
OUT
IN
= 50
I/O
IN
=8mA
=V
=-4mA
V
=V
30pF*
IH
IL,
CC
SS
SS
or OE=V
V
-0.2V or V
to V
IN
to V
=V
V
CC
L
IH
CC
CC
= 1.5V
or V
IH
-0.2V,
IH
Test Conditions
IN
or WE=V
(T
- 5 -
IL,
0.2V
Test Conditions
A
V
V
I
=0 to 70 C, Vcc=3.3 0.3V, unless otherwise specified)
OUT
I/O
IN
=0V
=0V
=0mA
Output Loads(B)
for t
IL
HZ
, t
* Including Scope and Jig Capacitance
LZ
, t
WHZ
Com.
Ind.
, t
OW
D
353
MIN
OUT
-
-
, t
See below
OLZ
0V to 3V
Value
1.5V
10ns
10ns
3ns
8ns
8ns
& t
OHZ
CMOS SRAM
Max
8
6
Min
2.4
-2
-2
-
-
-
-
-
-
-
for AT&T
+3.3V
319
5pF*
Max
0.4
80
65
90
75
20
Revision 3.0
2
2
5
-
June 2002
Unit
pF
pF
Unit
mA
mA
V
V
A
A