UPA1911ATE NEC [NEC], UPA1911ATE Datasheet - Page 3

• Manufacturer Part Number: UPA1911ATE
• Description: P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
• Manufacturer: NEC [NEC]

TYPICAL CHARACTERISTICS (T
−1.5
−1.0
−0.5
100
−10
80
60
40
20
−8
−6
−4
−2
0
0
0.0
−50
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
0
V
I
D
GATE TO SOURCE CUT-OFF VOLTAGE vs.
DS
= −1 mA
DERATING FACTOR OF FORWARD BIAS
V
= −10 V
GS
−0.2
= −4.5V
T
30
V
ch
T
DS
CHANNEL TEMPERATURE
A
0
- Channel Temperature - °C
SAFE OPERATING AREA
- Drain to Source Voltage - V
- Ambient Temperature - °C
−0.4
V
60
GS
V
= −2.5V
GS
50
= −4.0V
−0.6
90
A
100
= 25°C)
−0.8
120
−1.0
150
Data Sheet G15044EJ1V0DS
150
−0.00001
−0.0001
100.00
−0.001
−0.01
10.00
−0.01
−100
−100
−0.1
1.00
0.10
0.01
−0.1
−10
−10
−1
−0.1
−1
−0.01
0.0
Single Pulse
Mounted on 2500mm
Connected to Drain Electrode
in 50 mm x 50 mm x 1.6 mm FR-4 Board
V
V
FORWARD TRANSFER CHARACTERISTICS
DS
T
DS
FORWARD BIAS SAFE OPERATING AREA
A
T
= −10 V
= −10 V
= +75°C
FORWARD TRANSFER ADMITTANCE vs.
T
A
−0.5
A
= +125°C
= +125°C
V
T
−0.10
V
A
I
DS
D(DC)
= −25°C
GS
- Drain to Source Voltage - V
−1.0
−1.0
- Gate to Sorce Voltage - V
2
I
D
x 35 m Copper Pad
DRAIN CURRENT
I
D(pulse)
- Drain Current - A
µ
−1.00
−1.5
T
−10.0
A
−2.0
= +25°C
T
T
A
A
T
−10.00
= +75°C
= +25°C
A
µ µ µ µ PA1911A
= −25°C
−2.5
−100.00
−100.0
−3.0
3