UPA1911ATE NEC [NEC], UPA1911ATE Datasheet
UPA1911ATE
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UPA1911ATE Summary of contents
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P-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION The µ PA1911A is a switching device which can be driven directly by a 2.5 V power source. The µ PA1911A features a low on-state resistance and excellent switching characteristics, and is suitable for ...
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ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time ...
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TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 Ambient Temperature - ° DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE −10 = −4.0V V ...
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DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 300 = −2 +75°C T 250 A = +125° 200 150 100 50 = −25° −0.01 −0.10 −1.00 −10. Drain Current ...
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SWITCHING CHARACTERISTICS 1000. d(off d(on) 100.00 = − −4 Ω 10.00 −0.10 −1. Drain Current - A D DYNAMIC INPUT CHARACTERISTICS ...
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Data Sheet G15044EJ1V0DS µ µ µ µ PA1911A ...
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Data Sheet G15044EJ1V0DS µ µ µ µ PA1911A 7 ...
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The information in this document is current as of April, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date ...