SUM110P06-08L_06 VISHAY [Vishay Siliconix], SUM110P06-08L_06 Datasheet - Page 2

• Manufacturer Part Number: SUM110P06-08L_06
• Description: P-Channel 60-V (D-S) 175 Celsius MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

SPICE Device Model SUM110P06-08L
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
2
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www.vishay.com
SPECIFICATIONS (T
Static
Gate Threshold Voltage
On-State Drain Current
Drain-Source On-State Resistance
Forward Voltage
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
b
Parameter
a
c
c
c
a
J
= 25°C UNLESS OTHERWISE NOTED)
a
Symbol
V
r
I
DS(on)
C
V
C
C
Q
Q
D(on)
GS(th)
Q
oss
SD
rss
iss
gs
gd
g
V
V
V
DS
V
GS
GS
GS
= −30 V, V
= −10 V, I
= −10 V, I
= 0 V, V
V
V
V
V
DS
DS
GS
I
GS
Test Condition
F
= −50 A, V
= V
= −5 V, V
= −4.5 V, I
= −10 V, I
GS
DS
GS
D
D
, I
= −30 A, T
= −30 A, T
= −25 V, f = 1 MHz
= −10 V, I
D
= − 250 µA
GS
D
GS
D
= −30 A
= −10 V
= −20 A
= 0 V
D
J
J
= 125°C
= 175°C
= −110 A
Simulated
0.0068
0.0104
0.0123
0.0083
Data
8857
0.91
702
975
760
175
40
36
2
Measured
S-60677Rev. B, 01-May-06
0.0065
0.0085
Data
9200
Document Number: 73055
975
760
160
40
36
1
Unit
pF
nC
V
A
Ω
V