K6R1004C1B SAMSUNG [Samsung semiconductor], K6R1004C1B Datasheet - Page 5

• Manufacturer Part Number: K6R1004C1B
• Description: 256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out
• Manufacturer: SAMSUNG [Samsung semiconductor]

K6R1004C1B-C
WRITE CYCLE
TIMMING DIAGRAMS
Write Cycle Time
Chip Select to End of Write
Address Set-up Time
Address Valid to End of Write
Write Pulse Width(OE High)
Write Pulse Width(OE Low)
Write Recovery Time
Write to Output High-Z
Data to Write Time Overlap
Data Hold from Write Time
End Write to Output Low-Z
TIMING WAVEFORM OF READ CYCLE(1)
TIMING WAVEFORM OF READ CYCLE(2)
Address
Data Out
Address
CS
OE
Data out
V
Current
CC
Parameter
I
I
SB
CC
Previous Valid Data
Symbol
t
t
t
t
t
t
t
t
t
WP1
WHZ
t
t
WC
CW
AW
WP
WR
DW
OW
DH
AS
t
PU
t
Min
K6R1004C1B-8
LZ(4,5)
(Address Controlled
(WE=V
8
6
0
6
6
8
0
0
4
0
3
t
OLZ
t
OH
50%
t
AA
IH
)
t
CO
- 5 -
t
OE
Max
t
AA
4
-
-
-
-
-
-
-
-
-
-
,
CS=OE=V
t
RC
t
RC
K6R1004C1B-10
Min
10
10
7
0
7
7
0
0
5
0
3
IL
, WE=V
Valid Data
IH
Max
)
5
-
-
-
-
-
-
-
-
-
-
t
Valid Data
OHZ
K6R1004C1B-12
Min
12
12
PRELIMINARY
8
0
8
8
0
0
6
0
3
CMOS SRAM
t
50%
PD
t
t
Preliminary
HZ(3,4,5)
OH
PRELIMINARY
Max
February 1998
6
-
-
-
-
-
-
-
-
-
-
Rev 2.0
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns