K6R1004C1B SAMSUNG [Samsung semiconductor], K6R1004C1B Datasheet - Page 4

• Manufacturer Part Number: K6R1004C1B
• Description: 256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out
• Manufacturer: SAMSUNG [Samsung semiconductor]

K6R1004C1B-C
TEST CONDITIONS
READ CYCLE
AC CHARACTERISTICS
D
Output Loads(A)
* Capacitive Load consists of all components of the
Read Cycle Time
Address Access Time
Chip Select to Output
Output Enable to Valid Output
Chip Enable to Low-Z Output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Output Hold from Address Change
Chip Selection to Power Up Time
Chip Selection to Power DownTime
Input Pulse Levels
Input Rise and Fall Times
Input and Output timing Reference Levels
Output Loads
OUT
test environment.
Z
O
Parameter
= 50
Parameter
(T
A
=0 to 70 C, V
R
L
= 50
30pF*
Symbol
t
t
t
t
t
t
t
t
t
t
OLZ
t
OHZ
CO
OH
RC
AA
OE
HZ
PU
PD
LZ
V
CC
L
= 1.5V
=5.0V 10%, unless otherwise noted.)
K6R1004C1B-8
Min
8
3
0
0
0
3
0
-
-
-
-
- 4 -
Output Loads(B)
for t
Max
HZ
8
8
4
4
4
8
-
-
-
-
-
* Including Scope and Jig Capacitance
, t
LZ
, t
WHZ
K6R1004C1B-10
Min
10
, t
3
0
0
0
3
0
-
-
-
-
OW
D
255
OUT
, t
OLZ
See below
0V to 3V
Max
Value
& t
10
10
10
1.5V
5
5
5
3ns
-
-
-
-
-
OHZ
K6R1004C1B-12
PRELIMINARY
CMOS SRAM
Min
12
3
0
0
0
3
0
-
-
-
-
Preliminary
PRELIMINARY
+5.0V
480
5pF*
Max
February 1998
12
12
12
6
6
6
-
-
-
-
-
Rev 2.0
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns