HAT2285WP-EL-E RENESAS [Renesas Technology Corp], HAT2285WP-EL-E Datasheet - Page 5

• Manufacturer Part Number: HAT2285WP-EL-E
• Description: Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
• Manufacturer: RENESAS [Renesas Technology Corp]

HAT2285WP
Rev.3.00 Apr 05, 2006 page 5 of 9
Vin
10 V
Vin Monitor
Rg
Switching Time Test Circuit
0.03
0.01
0.3
0.1
10 µ
3
1
D = 1
0.5
D.U.T.
Normalized Transient Thermal Impedance vs. Pulse Width
100 µ
R
V
= 10 V
L
20
10
DS
0
Vout
Monitor
Source to Drain Voltage
1 m
Reverse Drain Current vs.
0.4
Source to Drain Voltage
Pulse Width PW (s)
5 V
10 V
0.8
10 m
V
1.2
GS
P
θch – c (t) = γ s (t) • θch – c
θch – c = 15.6°C/W, Tc = 25°C
DM
= 0 V, –5 V
t d(on)
Pulse Test
Vout
Vin
100 m
V
1.6
SD
PW
T
(V)
Switching Time Waveform
10%
2.0
10%
90%
1
t r
Tc = 25°C
D =
PW
T
t d(off)
10
90%
90%
10%
t f