HAT2285WP-EL-E RENESAS [Renesas Technology Corp], HAT2285WP-EL-E Datasheet - Page 2

• Manufacturer Part Number: HAT2285WP-EL-E
• Description: Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
• Manufacturer: RENESAS [Renesas Technology Corp]

HAT2285WP
Electrical Characteristics
• MOS1
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Notes: 3. Pulse test
• MOS2 & Schottky Barrier Diode
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Schottky Barrier diode forward voltage
Body–drain diode reverse
recovery time
Notes: 3. Pulse test
Rev.3.00 Apr 05, 2006 page 2 of 9
Item
Item
Symbol
Symbol
V
V
V
R
R
V
R
R
Coss
Coss
(BR)DSS
Crss
(BR)DSS
Crss
Ciss
Qgd
Ciss
Qgd
Qgs
t
t
Qgs
t
t
I
I
I
I
|y
V
|y
GS(off)
DS(on)
DS(on)
GS(off)
DS(on)
DS(on)
Qg
d(on)
d(off)
Qg
d(on)
d(off)
GSS
GSS
DSS
DSS
V
t
t
t
t
t
t
DF
rr
rr
fs
fs
r
f
r
f
F
|
|
Min
Min
1.0
1.4
30
10
30
24
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1930
0.91
Typ
Typ
630
155
300
130
4.6
2.2
1.2
3.6
5.8
4.5
4.0
0.5
19
27
18
57
30
35
18
14
15
40
18
10
20
45
16
—
—
—
—
—
—
—
—
7
Max
±0.1
1.19
Max
±0.1
2.5
2.5
24
40
18
23
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1
1
Unit
Unit
m A
m
m
m
m
nC
nC
nC
nC
nC
nC
pF
pF
pF
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
V
V
S
V
V
V
S
V
A
A
A
I
V
V
V
I
I
I
V
f = 1MHz
V
I
V
V
R
I
I
di
I
V
V
V
I
I
I
V
f = 1MHz
V
I
V
V
R
I
I
di
D
D
D
D
D
F
F
D
D
D
D
D
F
F
GS
DS
DS
DS
DD
GS
DD
GS
DS
DS
DS
DD
GS
DD
g
g
F
F
= 14 A, V
=14 A, V
= 3.5 A, V
= 22 A, V
= 10 mA, V
= 7 A, V
= 7 A, V
= 7 A, V
= 14 A
= 10 mA, V
=11 A, V
= 11 A, V
= 11 A, V
= 22 A
/ dt = 100 A/ s
/ dt = 100 A/ s
= 4.7
= 4.7
= ±20 V, V
= 30 V, V
= 10 V, I
= 10 V, V
= 10 V, V
=10 V, I
= ±12 V, V
= 30 V, V
= 10 V, I
= 10 V, V
= 10 V, V
= 10 V, I
10 V, R
10 V, R
Test Conditions
Test Conditions
GS
GS
DS
GS
GS
GS
GS
GS
DS
D
GS
D
D
D
= 10 V
= 10 V
= 4.5 V
GS
GS
GS
GS
GS
GS
GS
L
= 0
GS
L
= 7 A,
= 10 V
= 0
= 0
= 1 mA
=1 mA
= 4.5 V
= 10 V
= 11 A,
DS
DS
= 0
= 1.42 ,
= 0.91 ,
= 0
= 0
= 0,
= 4.5 V,
= 0
= 0
= 0,
= 4.5 V,
(Ta = 25°C)
= 0
(Ta = 25°C)
= 0
Note3
Note3
Note3
Note3
Note3
Note3
Note3
Note3