SI6459BDQ-T1 VISHAY [Vishay Siliconix], SI6459BDQ-T1 Datasheet - Page 3

• Manufacturer Part Number: SI6459BDQ-T1
• Description: P-Channel 60-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

Document Number: 72518
S-32220—Rev. A, 03-Nov-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.30
0.25
0.20
0.15
0.10
0.05
0.00
10
20
10
8
6
4
2
0
1
0.0
0
0
V
I
D
DS
V
Source-Drain Diode Forward Voltage
= 2.7 A
GS
0.2
On-Resistance vs. Drain Current
= 30 V
= 4.5 V
4
3
V
SD
Q
g
− Source-to-Drain Voltage (V)
I
0.4
− Total Gate Charge (nC)
D
− Drain Current (A)
Gate Charge
8
6
T
J
0.6
= 150_C
12
9
0.8
V
GS
T
J
16
12
= 10 V
= 25_C
1.0
1.2
20
15
New Product
1000
0.30
0.25
0.20
0.15
0.10
0.05
0.00
800
600
400
200
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
−50
0
0
On-Resistance vs. Gate-to-Source Voltage
C
On-Resistance vs. Junction Temperature
V
I
rss
−25
D
GS
= 2.7 A
10
= 10 V
2
T
V
V
0
J
GS
DS
− Junction Temperature (_C)
C
− Gate-to-Source Voltage (V)
20
oss
− Drain-to-Source Voltage (V)
25
Capacitance
4
I
D
Vishay Siliconix
50
30
= 2.7 A
C
iss
Si6459BDQ
6
75
40
100
www.vishay.com
8
50
125
150
10
60
3