SI6459BDQ-T1 VISHAY [Vishay Siliconix], SI6459BDQ-T1 Datasheet - Page 2

• Manufacturer Part Number: SI6459BDQ-T1
• Description: P-Channel 60-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

Si6459BDQ
Vishay Siliconix
Notes
a.
b.
www.vishay.com
2
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain Source On State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
20
16
12
8
4
0
0
b
Parameter
1
V
a
a
DS
Output Characteristics
− Drain-to-Source Voltage (V)
a
2
a
a
J
= 25_C UNLESS OTHERWISE NOTED)
3
V
GS
Symbol
V
r
r
I
DS(on)
t
t
I
I
I
GS(th)
V
= 10 thru 5 V
D(on)
Q
Q
d(on)
d(off)
GSS
DSS
DSS
Q
g
R
t
SD
t
t
rr
fs
gs
gd
r
f
g
g
4
4 V
3 V
5
New Product
V
DS
I
V
D
DS
^ −1 A, V
= −30 V, V
I
F
V
= −60 V, V
V
V
V
V
V
DS
= −1.25 A, di/dt = 100 A/ms
V
I
V
V
GS
S
DS
DS
GS
DS
DS
DD
DD
Test Condition
= −1.25 A, V
= 0 V, V
= −4.5 V, I
= V
= −5 V, V
= −15 V, I
= −10 V, I
= −60 V, V
= −30 V, R
= −30 V, R
GEN
GS
GS
GS
, I
GS
= −10 V, I
= −10 V, R
D
= 0 V, T
GS
D
D
D
= −250 mA
= "20 V
GS
GS
L
L
= −2.7 A
= −2.7 A
= −2.4 A
= −10 V
= 30 W
= 30 W
= 0 V
= 0 V
J
D
20
16
12
G
= 70_C
= −2.7 A
8
4
0
= 6 W
0
1
V
GS
Transfer Characteristics
− Gate-to-Source Voltage (V)
Min
−20
−1
25_C
2
T
C
= 125_C
0.092
0.120
Typ
−0.8
14.5
2.2
3.7
14
10
15
50
35
30
8
S-32220—Rev. A, 03-Nov-03
Document Number: 72518
3
"100
Max
0.115
0.150
−55_C
−1.2
−10
−3
−1
22
15
22
75
55
50
4
Unit
nA
mA
mA
nC
ns
V
A
W
W
S
V
W
5