HAT2092RJ-EL-E RENESAS [Renesas Technology Corp], HAT2092RJ-EL-E Datasheet - Page 5

• Manufacturer Part Number: HAT2092RJ-EL-E
• Description: Silicon N Channel Power MOS FET High Speed Power Switching
• Manufacturer: RENESAS [Renesas Technology Corp]

HAT2092R
Rev.3.00 Jan. 13, 2005 page 5 of 7
0.0001
0.0001
0.001
0.001
0.01
0.01
0.1
0.1
10
10
10 µ
10 µ
1
1
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
D = 1
D = 1
0.5
100 µ
100 µ
1 m
1 m
50
40
30
20
10
0
10 m
10 m
Source to Drain Voltage
0.4
Pulse Width PW (S)
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Width PW (S)
100 m
100 m
5 V
10 V
0.8
1
1
When using the glass epoxy board
(FR4 40x40x1.6 mm)
θ
θ
1.2
P
When using the glass epoxy board
(FR4 40x40x1.6 mm)
θ
θ
P
DM
V
ch - f(t) = s (t) x
ch - f = 125°C/W, Ta = 25°C
DM
ch - f(t) = s (t) x
ch - f = 166°C/W, Ta = 25°C
GS
Pulse Test
= 0
V
10
10
1.6
SD
γ
PW
γ
(V)
T
PW
T
2.0
100
100
θ
θ
ch - f
ch - f
D =
1000
1000
D =
PW
PW
T
T
10000
10000