HAT2092RJ-EL-E RENESAS [Renesas Technology Corp], HAT2092RJ-EL-E Datasheet - Page 2

• Manufacturer Part Number: HAT2092RJ-EL-E
• Description: Silicon N Channel Power MOS FET High Speed Power Switching
• Manufacturer: RENESAS [Renesas Technology Corp]

HAT2092R
Electrical Characteristics
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Note:
Rev.3.00 Jan. 13, 2005 page 2 of 7
4. Pulse test
Item
Symbol
V
V
R
R
V
Coss
(BR)DSS
(BR)GSS
Crss
Ciss
Qgs
Qgd
t
t
I
I
V
GS(off)
|y
DS(on)
DS(on)
Qg
d(on)
d(off)
GSS
DSS
t
t
t
DF
rr
fs
r
f
|
Min
1.0
30
—
—
—
—
12
—
—
—
—
—
—
—
—
—
—
—
—
20
1400
0.85
Typ
190
340
13
17
20
22
15
17
50
50
—
—
—
—
—
4
4
9
Max
1.10
2.5
—
—
16
25
—
—
—
—
—
—
—
—
—
—
—
—
10
1
Unit
m
m
pF
pF
pF
nc
nc
ns
ns
ns
ns
ns
nc
V
V
V
S
V
A
A
I
I
V
V
V
I
I
I
V
V
f = 1MHz
V
V
I
V
V
R
R
IF = 11A, V
IF = 11A, V
diF/ dt =50A/µs
D
G
D
D
D
D
GS
DS
DS
DS
GS
DD
GS
GS
DD
L
g
= 10 mA, V
= 100 A, V
= 5.5 A, V
= 5.5 A, V
= 5.5 A, V
= 11 A
= 1.83
= 4.7
= 30 V, V
= 10 V, I
= 10V
= 16 V, V
= 0
= 10 V
= 10 V
= 10 A, I
10 V
Test Conditions
GS
GS
GS
GS
DS
D
D
GS
GS
= 0
= 0
= 1 mA
= 5.5 A
DS
= 10 V
= 10 V
= 4.5 V
DS
= 0
= 0
= 0
Note4
= 0
(Ta = 25°C)
Note4
Note4
Note4