BSS295E6288 INFINEON [Infineon Technologies AG], BSS295E6288 Datasheet - Page 7

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BSS295E6288

Manufacturer Part Number
BSS295E6288
Description
SIPMOS Small-Signal Transistor
Manufacturer
INFINEON [Infineon Technologies AG]
Datasheet
Drain-source on-resistance
R
parameter: I
R
Typ. capacitances
C = f ( V
parameter: V
Data Sheet
C
DS (on)
DS (on)
0.75
0.65
0.60
0.55
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
10
10
10
10
pF
DS
-60
3
2
1
0
0
= ( T
)
GS
D
5
j
)
= 1.4 A, V
-20
=0V, f = 1 MHz
10
20
15
GS
98%
typ
20
= 10 V
60
25
100
30
T
˚C
V
j
V
DS
C
C
C
iss
oss
rss
160
40
7
Gate threshold voltage
V
parameter: V
V
Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
I
GS (th)
F
= ( V
10
10
10
10
4.6
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
A
V
-1
-2
-60
SD
1
0
0.0
= ( T
)
0.4
j
j
GS
, t
)
-20
p
= V
= 80 µs
0.8
DS
20
, I
1.2
T
T
T
T
D
j
j
j
j
= 25 ˚C typ
= 150 ˚C typ
= 25 ˚C (98%)
= 150 ˚C (98%)
98%
typ
2%
= 1 mA
1.6
60
2.0
100
BSS 295
2.4
T
V
˚C
j
SD
V
05.99
160
3.0

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