BSS209PW_06 INFINEON [Infineon Technologies AG], BSS209PW_06 Datasheet - Page 6

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BSS209PW_06

Manufacturer Part Number
BSS209PW_06
Description
OptiMOS-P Small-Signal-Transistor
Manufacturer
INFINEON [Infineon Technologies AG]
Datasheet
Rev 1.3
9 Drain-source on-resistance
R
parameter: I
11 Typ. capacitances
C = f (V
parameter: V
DS(on)
m
pF
10
10
10
700
600
550
500
450
400
350
300
250
-60
3
2
1
0
DS
= f(T j )
)
D
-20
GS
= -0.58 A, V
5
=0, f=1 MHz
20
10
Crss
Ciss
Coss
60
98%
typ.
GS
= -4.5 V
100
V
°C
T
- V
j
DS
160
20
Page 6
10 Gate threshold voltage
V
parameter: V
12 Forward character. of reverse diode
I
parameter: T j , t
F
GS(th)
= f (V
-10
-10
-10
-10
1.4
V
0.8
0.6
0.4
0.2
A
-1
-2
1
0
-60
1
0
0
= f (T j )
SD
BSS 209PW
)
-0.4
-20
GS
-0.8
p
= V
= 80 µs
20
DS
-1.2
T
T
T
T
j
j
j
j
, I
= 25 °C typ
= 150 °C typ
= 25 °C (98%)
= 150 °C (98%)
D
-1.6
98%
2%
60
typ.
= -3.5 µA
-2
BSS 209PW
100
2006-12-04
-2.4
°C
V
V
T
SD
j
160
-3

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