2SK4003_09 TOSHIBA [Toshiba Semiconductor], 2SK4003_09 Datasheet

2SK4003_09

Manufacturer Part Number

2SK4003_09

Description

Chopper Regulator, DC-DC Converter and Motor Drive

Manufacturer

TOSHIBA [Toshiba Semiconductor]

Datasheet

1.2SK4003_09.pdf (3 pages)

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Chopper Regulator, DC-DC Converter and Motor Drive

Applications

Absolute Maximum Ratings

Thermal Characteristics

Low drain−source ON-resistance: R

Low leakage current: I

Enhancement mode: V

Drain−source voltage

Drain−gate voltage (R

Gate−source voltage

Drain current

Drain power dissipation (Tc = 25°C)

Single-pulse avalanche energy

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

Storage temperature range

Note:

Thermal resistance, channel to ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: V

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Handle with care.

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the

absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability

Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Characteristic

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type

= 90 V, T

Pulse

DSS

= 20 kΩ)

= 2.0 to 4.0 V (V

= 25°C (initial), L = 8.2 mH, R

(Note 1)

(Note 2)

= 100 μA (max) (V

DS (ON)

(Ta = 25°C)

Symbol

DGR

GSS

DSS

Symbol

stg

th (ch−a)

2SK4003

= 1.7 Ω (typ.)

= 10 V, I

= 600 V)

−55 to 150

Rating

600

±30

168

150

= 1 mA)

Max

125

= 25 Ω, I

°C / W

Unit

°C

= 6 A

Weight: 0.36 g (typ.)

0.8 MAX.

JEDEC

JEITA

TOSHIBA

0.9

1.1 MAX.

(π

（HEAT SINK）

GATE

DRAIN

SOURSE

−MOS VI)

6.5 ± 0.2

5.2 ± 0.2

2.3

0.6 ± 0.15

2-7J2B

2009-09-29

⎯

2SK4003

Unit: mm

0.6 MAX.

1.1 ± 0.2

Related parts for 2SK4003_09

2SK4003_09 Summary of contents

Page 1

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Chopper Regulator, DC-DC Converter and Motor Drive Applications Low drain−source ON-resistance 100 μA (max) (V Low leakage current: I DSS Enhancement mode 2 ...

Page 2

Electrical Characteristics Characteristic Gate leakage current Gate−source breakdown voltage Drain cutoff current Drain−source breakdown voltage Gate threshold voltage Drain−source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn−on time Switching time Fall time Turn−off time ...

Page 3

RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and ...

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