www.DataSheet4U.com
Chopper Regulator, DC/DC Converter and Motor Drive
Applications
Absolute Maximum Ratings
Thermal Characteristics
Low drain−source ON-resistance
Low leakage current
Enhancement mode
Drain−source voltage
Drain−gate voltage (R
Gate−source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Note:
Thermal resistance, channel to
ambient
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristic
Characteristic
DD
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type
= 90 V, T
DC
Pulse
GS
= 20 kΩ)
ch
= 25°C (initial), L = 8.2 mH, R
(Note 1)
(Note 1)
(Note 2)
: I
: V
DSS
th
= 2.0~4.0 V (V
= 100 μA (max) (V
(Ta = 25°C)
R
Symbol
Symbol
th (ch−a)
: R
V
V
V
E
E
T
I
I
T
DGR
GSS
P
DSS
I
DP
AR
AS
AR
stg
D
ch
D
DS (ON)
2SK4003
DS
= 1.7 Ω (typ.)
= 10 V, I
−55~150
DS
Rating
Max
600
600
±30
168
150
125
12
20
G
3
3
2
1
= 600 V)
= 25 Ω, I
D
= 1 mA)
°C / W
AR
Unit
Unit
mJ
mJ
°C
°C
W
A
A
V
V
V
A
= 6 A
Weight: 0.36 g (typ.)
JEDEC
JEITA
TOSHIBA
0.8 MAX.
1.1 MAX.
0.9
(π
−MOS VI)
1
6.5±0.2
5.2±0.2
2.3
2
2.3
0.6±0.15
3
0.6±0.15
2-7J2B
2006-11-08
⎯
⎯
2SK4003
0.6 MAX
1.1±0.2
0.6 MAX.
Unit: mm