AS4C256K16E0-30 ALSC [Alliance Semiconductor Corporation], AS4C256K16E0-30 Datasheet - Page 6

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AS4C256K16E0-30

Manufacturer Part Number
AS4C256K16E0-30
Description
5V 256Kx16 CMOS DRAM (EDO)
Manufacturer
ALSC [Alliance Semiconductor Corporation]
Datasheet
EDO page mode cycle
Shaded areas contain advance information.
Refresh cycle
Shaded areas contain advance information.
Output enable
Shaded areas contain advance information.
Self refresh cycle
Shaded areas contain advance information.
Std
Symbol
t
t
t
t
t
t
Std
Symbol
t
t
t
t
Std
Symbol
t
t
t
t
t
Std
Symbol
t
t
t
PC
CAP
CP
PCM
CRW
RASP
CSR
CHR
RPC
CPT
ROH
OEA
OED
OEZ
OEH
RASS
RPS
CHS
4/11/01; v.1.1
Parameter
RAS pulse width
(CBR self refresh)
RAS precharge time
(CBR self refresh)
CAS
(CBR self refresh)
Parameter
Read or write cycle time
Access time from
CAS
EDO page mode RMW cycle
Page mode
RAS
Parameter
CAS setup time (CAS-before-RAS)
CAS
RAS precharge to
CAS
(
Parameter
RAS hold time referenced to OE
OE
OE
Output buffer turnoff delay from
OE
CAS
access time
to data delay
command hold time
hold time
precharge time
pulse width
hold time (
precharge time
-before-RAS counter test)
CAS
pulse width (RMW)
CAS
CAS
CAS
-before-RAS)
precharge
hold time
OE
Alliance Semiconductor
100K
Min
Min
85
30
Min
10
Min
7
0
8
12
56
44
30
5
5
8
3
-30
-30
-30
-30
Max
Max
Max
Max
75K
10
19
®
8
100K
Min
Min
85
30
Min
10
Min
8
0
8
14
58
46
35
5
5
8
4
-35
-35
-35
-35
Max
Max
Max
Max
75K
21
10
8
100K
Min
Min
Min
Min
10
10
85
30
25
60
50
50
0
8
5
8
8
5
-50
-50
-50
-50
Max
Max
Max
Max
75K
10
23
8
AS4C256K16E0
Unit
ns
ns
ns
ns
Unit
ns
ns
ns
ns
ns
Unit
ns
ns
ns
Unit
ns
ns
ns
ns
ns
ns
Notes
3
3
Notes
8
Notes
Notes
14
13
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