AS4C256K16E0-30 ALSC [Alliance Semiconductor Corporation], AS4C256K16E0-30 Datasheet - Page 5

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AS4C256K16E0-30

Manufacturer Part Number
AS4C256K16E0-30
Description
5V 256Kx16 CMOS DRAM (EDO)
Manufacturer
ALSC [Alliance Semiconductor Corporation]
Datasheet
Write cycle
Shaded areas contain advance information.
Read-modify-write cycle
Shaded areas contain advance information.
Std
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
Std
Symbol
t
t
t
t
t
t
ASC
CAH
AWR
WCS
WCH
WCR
WP
RWL
CWL
DS
DH
DHR
RWC
RWD
CWD
AWD
RSH(W)
CAS(W)
4/11/01; v.1.1
Parameter
Column address setup time
Column address hold time
Column address hold time to
Write command setup time
Write command hold time
Write command hold time to
Write command pulse width
Write command to
Write command to
Data-in setup time
Data-in hold time
Data-in hold time to
Parameter
Read-write cycle time
RAS
CAS
Column address to
CAS
CAS
to
to
to
pulse width (write)
WE
WE
RAS
delay time
delay time
hold time (write)
RAS
CAS
WE
RAS
delay time
lead time
lead time
RAS
RAS
Alliance Semiconductor
Min
26
26
10
10
26
Min
100
0
5
0
5
5
0
5
50
26
32
10
15
-30
-30
Max
Max
®
Min
28
28
11
11
28
Min
105
0
5
0
5
5
0
5
54
28
35
10
15
-35
-35
Max
Max
Min
30
30
12
12
30
Min
120
0
9
0
9
9
0
9
60
30
40
12
15
-50
-50
Max
Max
AS4C256K16E0
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Unit
ns
ns
ns
ns
ns
ns
Notes
11
11
12
12
Notes
11
11
11
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