T1G6001528-Q3 TRIQUINT [TriQuint Semiconductor], T1G6001528-Q3 Datasheet
T1G6001528-Q3
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T1G6001528-Q3 Summary of contents
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T1G4005528-FS 55W, 28V, DC – 3.5GHz, GaN RF Power Transistor Applications • Military radar • Civilian radar • Professional and military radio communications • Test instrumentation • Avionics • Wideband or narrowband amplifiers Product Features • Frequency 3.5 GHz • Linear Gain: > 3.5 GHz • Operating Voltage • Output ...
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T1G4005528-FS 55W, 28V, DC – 3.5GHz, GaN RF Power Transistor Specifications Absolute Maximum Ratings Sym Parameter V Positive Supply Value + 1 V Negative Supply Voltage Range - I Positive Supply Current Gate Supply Current G P Power Dissipation 1 ...
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... Operating Voltage • Low thermal resistance package General Description The TriQuint T1G6001528- (P3dB) discrete GaN on SiC HEMT which operates from GHz and typically provides >10 dB gain at 6 GHz. The device is constructed with TriQuint’s proven 0.25 μm process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions ...
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... T1G6001528-Q3 DC – 6 GHz 18 W GaN RF Power Transistor Specifications Absolute Maximum Ratings Parameter Drain Voltage,Vd Gate Voltage,Vg Drain to Gate Voltage, Vd – Vg Drain Current, Id Gate Current, Ig Power Dissipation, Pdiss RF Input Power, CW 25ºC Channel Temperature, Tch Mounting Temperature (30 Seconds) Storage Temperature Absolute maximum ratings at 3 GHz. ...