AGR09030E TRIQUINT [TriQuint Semiconductor], AGR09030E Datasheet

AGR09030E

Manufacturer Part Number

AGR09030E

Description

30 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET

Manufacturer

TRIQUINT [TriQuint Semiconductor]

Datasheet

1.AGR09030E.pdf (7 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

AGR09030EF

Manufacturer:

ASI

Quantity:

20 000

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Download datasheet (338Kb)

AGR09030E

30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET

Introduction

The AGR09030E is a high-voltage, gold-metalized,

laterally diffused metal oxide semiconductor

(LDMOS) RF power transistor suitable for cellular

band, code-division multiple access (CDMA), global

system for mobile communication (GSM), enhanced

data for global evolution (EDGE), and time-division

multiple access (TDMA) single and multicarrier class

AB wireless base station amplifier applications. This

device is manufactured on an advanced LDMOS

technology, offering state-of-the-art performance,

reliability, and thermal resistance. Packaged in an

industry-standard CuW package capable of deliver-

ing a minimum output power of 30 W, it is ideally

suited for today's RF power amplifier applications.

Features

AGR09030EU (unflanged)

Typical performance ratings are for IS-95 CDMA,

pilot, sync, paging, traffic codes 8—13:

— Output power (P

— Power gain: 21 dB.

— Efficiency: 27%.

— Adjacent channel power ratio (ACPR) for

— Input return loss: 10 dB.

High-reliability, gold-metalization process.

High gain, efficiency, and linearity.

Integrated ESD protection.

Si LDMOS.

Industry-standard packages.

30 W minimum output power.

30 kHz bandwidth (BW):

(750 kHz offset: –45 dBc)

(1.98 MHz offset: –60 dBc).

Figure 1. Available Packages

OUT

): 7 W.

AGR09030EF (flanged)

Table 1. Thermal Characteristics

Table 2. Absolute Maximum Ratings*

* Stresses in excess of the absolute maximum ratings can cause

Table 3. ESD Rating*

* Although electrostatic discharge (ESD) protection circuitry has

Caution: MOS devices are susceptible to damage from elec-

Drain-source Voltage

Gate-source Voltage

Drain Current—Continuous

Total Dissipation at T

Operating Junction Tempera-

Storage Temperature Range

Thermal Resistance,

been designed into this device, proper precautions must be

taken to avoid exposure to ESD and electrical overstress (EOS)

during all handling, assembly, and test operations. Agere

employs a human-body model (HBM), a machine model (MM),

and a charged-device model (CDM) qualification requirement in

order to determine ESD-susceptibility limits and protection

design evaluation. ESD voltage thresholds are dependent on the

circuit parameters used in each of the models, as defined by

JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and

JESD22-C101A (CDM) standards.

permanent damage to the device. These are absolute stress rat-

ings only. Functional operation of the device is not implied at

these or any other conditions in excess of those given in the

operational sections of the data sheet. Exposure to absolute

maximum ratings for extended periods can adversely affect

device reliability.

Derate Above 25 °C:

ture

Junction to Case:

AGR09030E

AGR09030EU

AGR09030EF

AGR09030EU

AGR09030EF

AGR09030EU

AGR09030EF

HBM

CDM

Parameter

trostatic charge. Reasonable precautions in han-

dling and packaging MOS devices should be

observed.

Parameter

Minimum (V)

= 25 °C:

1500

500

Sym

DSS

—

STG

Value

1.85

–65, +150 °C

–0.5, +15 Vdc

2.2

Value

4.25

0.54

0.45

200

PEAK Devices

Class

°C/W

Unit

W/°C

Unit

Vdc

Adc

°C

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