TGA2527-SM TRIQUINT [TriQuint Semiconductor], TGA2527-SM Datasheet - Page 2

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TGA2527-SM

Manufacturer Part Number
TGA2527-SM
Description
Ku-Band Power Amplifier
Manufacturer
TRIQUINT [TriQuint Semiconductor]
Datasheet

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TGA2527-SM
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Operation of this device outside the parameter ranges given
above may cause permanent damage. These are stress
ratings only, and functional operation of the device at these
conditions is not implied.
TGA2527-SM
Ku-Band Power Amplifier
Absolute Maximum Ratings
Electrical Specifications
Test conditions unless otherwise noted: 25ºC,
Preliminary Data Sheet: Rev - 11/21/11
© 2011 TriQuint Semiconductor, Inc.
Specifications
Parameter
Operational Frequency Range
Gain
Input Return Loss
Output Return Loss
Output Power @ Saturation
Output Power @ 1 dB Gain Compression
Output TOI @ Pout/Tone = 20 dBm
Noise Figure
Gain Temperature Coefficient
Power Temperature Coefficient
Parameter
Drain Voltage,Vd
Gate Voltage,Vg
Drain Current, Id
Gate Current, Ig
Power Dissipation, Pdiss
RF Input Power, CW, 50Ω,T = 25ºC
Channel Temperature, Tch
Mounting Temperature (30 Seconds)
Storage Temperature
Rating
+8 V
-3 to 0 V
1.12 A
-5.5 to 88 mA
9 W
24 dBm
200
260
-40 to 150
Vd = 6 V, Id = 650 mA, Vg = -0.55 V Typical
o
o
C
C
o
C
Min
12.5
- 2 of 13 -
Recommended Operating Conditions
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Parameter
Id_drive (Under RF
Drive)
Vg
Vd
Id
Connecting the Digital World to the Global Network
Typical
Disclaimer: Subject to change without notice
-0.033
-0.005
31.5
-10
-10
7.5
25
30
41
Min
.
Typical
-0.55
650
850
6
Max
15.5
Max Units
Units
GHz
dB
dB
dB
dBm
dBm
dBm
dB
dB/°C
dBm/°C
V
mA
mA
V
®

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