J111_12 ONSEMI [ON Semiconductor], J111_12 Datasheet

J111_12

Manufacturer Part Number

J111_12

Description

JFET Chopper Transistors N.Channel . Depletion

Manufacturer

ONSEMI [ON Semiconductor]

Datasheet

1.J111_12.pdf (5 pages)

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Download datasheet (91Kb)

J111, J112

JFET Chopper Transistors

N−Channel — Depletion

Features

•

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

*For additional information on our Pb−Free strategy and soldering details, please

March, 2006 − Rev. 2

MAXIMUM RATINGS

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Drain −Gate Voltage

Gate −Source Voltage

Gate Current

Total Device Dissipation @ T

Derate above = 25°C

Lead Temperature

Operating and Storage Junction

Temperature Range

Pb−Free Packages are Available*

Rating

= 25°C

Symbol

, T

stg

−65 to +150

Value

−35

350

300

2.8

mW/°C

mAdc

Unit

Vdc

°C

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

(Note: Microdot may be in either location)

ORDERING INFORMATION

GATE

J11x = Device Code

MARKING DIAGRAM

http://onsemi.com

= Assembly Location

= Year

= Work Week

= Pb−Free Package

x = 1 or 2

AYWW G

J11x

2 SOURCE

Publication Order Number:

CASE 29−11

1 DRAIN

STYLE 5

TO−92

J111/D

Related parts for J111_12

J111_12 Summary of contents

Page 1

J111, J112 JFET Chopper Transistors N−Channel — Depletion Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Drain −Gate Voltage Gate −Source Voltage Gate Current Total Device Dissipation @ T = 25°C A Derate above = 25°C Lead Temperature Operating ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Gate −Source Breakdown Voltage = −1.0 mAdc Gate Reverse Current (V = −15 Vdc) GS Gate Source Cutoff Voltage = 1.0 mAdc 5.0 Vdc Drain−Cutoff Current (V = ...

Page 3

TYPICAL SWITCHING CHARACTERISTICS 1000 500 ′ J111 K D 200 J112 100 J113 5.0 K 2.0 1.0 0.5 0.7 1.0 2.0 3.0 5.0 7 DRAIN CURRENT (mA) D ...

Page 4

J113 7.0 5 25°C channel 3.0 2.0 0.5 0.7 1.0 2.0 3.0 5.0 7 DRAIN CURRENT (mA) D Figure 6. Typical Forward Transfer Admittance 200 ...

Page 5

SEATING K PLANE Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any ...

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