J111RL1 ONSEMI [ON Semiconductor], J111RL1 Datasheet

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J111RL1

Manufacturer Part Number
J111RL1
Description
JFET Chopper Transistors N−Channel - Depletion
Manufacturer
ONSEMI [ON Semiconductor]
Datasheet
J111, J112
JFET Chopper Transistors
N−Channel — Depletion
Features
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 2
MAXIMUM RATINGS
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Drain −Gate Voltage
Gate −Source Voltage
Gate Current
Total Device Dissipation @ T
Derate above = 25°C
Lead Temperature
Operating and Storage Junction
Temperature Range
Pb−Free Packages are Available*
Rating
A
= 25°C
Symbol
T
J
V
V
P
T
, T
I
DG
GS
G
D
L
stg
−65 to +150
Value
−35
−35
350
300
2.8
50
1
mW/°C
mAdc
Unit
Vdc
Vdc
mW
°C
°C
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
(Note: Microdot may be in either location)
ORDERING INFORMATION
GATE
1
J11x = Device Code
A
Y
WW
G
3
2
MARKING DIAGRAM
3
http://onsemi.com
= Assembly Location
= Year
= Work Week
= Pb−Free Package
x = 1 or 2
AYWW G
J11x
2 SOURCE
Publication Order Number:
G
CASE 29−11
1 DRAIN
STYLE 5
TO−92
J111/D

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J111RL1 Summary of contents

Page 1

J111, J112 JFET Chopper Transistors N−Channel — Depletion Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Drain −Gate Voltage Gate −Source Voltage Gate Current Total Device Dissipation @ T = 25°C A Derate above = 25°C Lead Temperature Operating ...

Page 2

... Vdc 1.0 MHz) GS Source Gate Off−Capacitance (V = −10 Vdc 1.0 MHz Pulse Width = 300 ms, Duty Cycle = 3.0%. ORDERING INFORMATION Device J111RL1 J111RL1G J111RLRA J111RLRAG J111RLRP J111RLRPG J112 J112G J112RL1 J112RL1G J112RLRA J112RLRAG †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D ...

Page 3

TYPICAL SWITCHING CHARACTERISTICS 1000 500 ′ J111 K D 200 J112 100 J113 5.0 K 2.0 1.0 0.5 0.7 1.0 2.0 3.0 5.0 7 DRAIN CURRENT (mA) D ...

Page 4

J113 7.0 5 25°C channel 3.0 2.0 0.5 0.7 1.0 2.0 3.0 5.0 7 DRAIN CURRENT (mA) D Figure 6. Typical Forward Transfer Admittance 200 ...

Page 5

SEATING K PLANE Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any ...

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