BUK75 NXP [NXP Semiconductors], BUK75 Datasheet - Page 5

• Manufacturer Part Number: BUK75
• Description: N-channel TrenchMOS standard level FET
• Manufacturer: NXP [NXP Semiconductors]

NXP Semiconductors
6. Characteristics
Table 5.
T
BUK75_7608-40B_2
Product data sheet
Symbol Parameter
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
L
L
Source-drain diode
DSS
GSS
d(on)
r
d(off)
f
j
D
S
(BR)DSS
GS(th)
DSon
iss
oss
rss
G(tot)
GS
GD
= 25 C unless otherwise specified.
drain-source breakdown
voltage
gate-source threshold voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
internal source inductance
Characteristics
Conditions
I
I
V
V
V
I
see
V
see
V
V
from drain lead 6 mm from
package to center of die
from contact screw on
mounting base to center of die
SOT78
from upper edge of drain
mounting base to center of die
SOT404
from source lead 6 mm from
package to source bond pad
D
D
D
DS
GS
GS
GS
DD
GS
T
T
T
T
T
T
T
T
T
= 250 A; V
= 1 mA; V
= 25 A; V
j
j
j
j
j
j
j
j
j
Figure 14
Figure 12
= 40 V; V
Rev. 02 — 16 November 2007
= 20 V; V
= 10 V; I
= 0 V; V
= 30 V; R
= 10 V; R
= 25 C
=
= 25 C
= 175 C
= 55 C
= 25 C
= 175 C
= 25 C
= 175 C
55 C
DD
DS
DS
D
GS
L
G
GS
=25 A; see
= 32 V; V
DS
= V
= 25 V; f = 1 MHz;
= 1.2 ;
= 10
= 0 V
= 0 V
= 0 V
GS
; see
GS
Figure 6
Figure 9
= 10 V;
N-channel TrenchMOS standard level FET
and
and
8
10
BUK75/7608-40B
Min
40
36
2
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
3
-
-
0.02
-
2
6.6
-
36
9
12
2017
486
213
20
51
20
33
4,5
3.5
2.5
7.5
© NXP B.V. 2007. All rights reserved.
Max
-
-
4
-
4.4
1
500
100
8
15.2
-
-
-
2689
583
291
-
-
-
-
-
-
-
5 of 14
Unit
V
V
V
V
V
nA
m
m
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
nH
nH
nH
A
A