SE1000W SIGE [SiGe Semiconductor, Inc.], SE1000W Datasheet
SE1000W
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SE1000W Summary of contents
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... SiGe Semiconductor offers a portfolio of optical networking ICs for use in high-performance optical transmitter and receiver functions, from 155 Mb 12.5 Gb/s. SiGe Semiconductor’s SE1000W is a fully integrated, silicon bipolar transimpedance amplifier; providing wideband, low noise preamplification of signal current from a photodetector. differential outputs, selectable by wire bond options, ...
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... Positive differential or single-ended voltage output. Positive supply (+5.0 V), pads 2 & 10 are connected on chip. Only one pad needs to 10 VCC1 be bonded. 40-DST-01 § Rev 1.5 § May 24/02 TM LightCharger 155 Mb/s Transimpedance Amplifier 1 2 Top View VEE2 ACGND VEE1 VEE1 Description SE1000W Final 10 VCC1 9 OUTP 8 OUTN ...
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... The circuit achieves a power supply rejection on the outputs for both single-ended and differential operation 100 kHz. The use of external decoupling will help to remove any unwanted signals at higher frequencies. SE1000W Final 1 nF). Under these ...
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... Rev 1.5 § May 24/02 TM LightCharger 155 Mb/s Transimpedance Amplifier Min –0.7 –0.5 –20 –5 –2 –0.25 –65 Min Typ 4.7 5.0 –40 Min Typ 39 4 VCC–3.2 VCC–3.0 2 SE1000W Final Max Unit 6.0 V VCC+0 0.25 kV 150 C Max Unit 5 Max Unit ...
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... Transimpedance (Tz) measured with 1 A mean photocurrent 40-DST-01 § Rev 1.5 § May 24/02 TM LightCharger 155 Mb/s Transimpedance Amplifier Min Typ 150 on output 2600 +1 coupled via 220 nF (single-ended) SE1000W Final Max Unit MHz 20 k 155 Mb/s 300 mV pk-pk kHz dB A pk-pk dBm 15 nA rms ...
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... Rev 1.5 § May 24/02 TM LightCharger 155 Mb/s Transimpedance Amplifier X Y Name Coordinate Coordinate (µm) (µm) VCC2 -307.3 679.0 VCC1 -307.3 549.0 TZ_IN -307.3 315.0 VEE2 0 0 ACGND 130.0 0 VEE1 260.0 0 VEE1 390.0 0 OUTN 690.7 155.0 OUTP 690.7 285.0 VCC1 690.7 679.0 SE1000W Final ...
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... The diagram below shows the bondpad configuration of the SE1000W Transimpedance Amplifier. Note that the diagram is not to scale. All bondpads are 92 µ µm with a passivation opening of 82 µ µm. There are two VCC1 and two VEE1 pads for ease of wire bonding; these pad pairs are connected on-chip and only one pad of each type is required to be bonded out ...
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... VCC2 VCC1 9 TZ Amplifier OUTP SE1000W 8 OUTN VEE2 VEE1 ACGND VCC2 VCC1 9 TZ Amplifier OUTP SE1000W 8 OUTN VEE2 VEE1 ACGND SE1000W Final 1 nF min loads, AC coupled 1 nF min load, AC coupled ...
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... Headquarters: Canada Phone: +1 613 820 9244 Fax: +1 613 820 4933 2680 Queensview Drive Ottawa ON K2B 8J9 Canada sales@sige.com United Kingdom 1010 Cambourne Business Park Cambourne Cambridge CB3 6DP Phone: +44 1223 598 444 Fax: SE1000W Final +44 1223 598 035 ...